Semiconductor Temperature Sensor Layout Isolating Lifetime Killers
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Solution Overview
Problem
Existing semiconductor devices face challenges in suppressing variations in temperature sensor characteristics, particularly due to the introduction of lifetime killers which can affect the accuracy of temperature sensing.
Innovation Solution
The semiconductor device incorporates a temperature sensing unit adjacent to the diode section, with an upper lifetime control region provided in the diode section and positioned to ensure a distance of 90 μm or less from the temperature sensing unit, thereby preventing the implantation of lifetime killers into the temperature sensing unit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If lifetime killers are introduced to improve device performance, then switching characteristics are improved, but temperature sensor characteristics vary and accuracy deteriorates
Solution Approach 1:
The device is segmented into distinct functional regions: a first region containing the temperature sensing unit and a second region containing the lifetime control region. This spatial segmentation prevents lifetime killers from affecting the temperature sensor while still improving switching characteristics in the power device region.
Solution Approach 2:
Different regions are given different local qualities: the first region (temperature sensing area) is kept free of lifetime killers to maintain measurement precision, while the second region (power device area) receives lifetime killers to improve switching characteristics. This localized treatment resolves the contradiction by applying the harmful factor only where beneficial.
2Productivity
If lifetime killers are introduced to improve switching characteristics, then device performance is improved, but harmful effects are introduced to the temperature sensing unit
Solution Approach 1:
The device structure is divided into a first region for temperature sensing and a second region for power device operation. This segmentation isolates the temperature sensing unit from the harmful effects of lifetime killers, allowing switching characteristics to be improved without degrading sensor performance.
Solution Approach 2:
The region boundary acts as an intermediary that separates the temperature sensing unit from the lifetime control region. This spatial separation prevents the harmful factor (lifetime killers) from reaching the sensitive component while still allowing the beneficial effect to occur in the power device region.
3Measurement precision
If the temperature sensing unit is placed close to the diode section for accurate measurement, then measurement accuracy is improved, but the unit becomes vulnerable to lifetime killer implantation
Solution Approach 1:
The first region containing the temperature sensing unit is given the local quality of being free from lifetime killers, while the second region receives lifetime killers. This creates a protected zone that maintains both measurement precision and reliability by preventing harmful factor implantation in the sensitive area.
Solution Approach 2:
The device is segmented into a protected first region for temperature sensing and a treated second region for power device operation. This segmentation allows the temperature sensing unit to be positioned for accurate measurement while the region boundary protects it from lifetime killer implantation.
Data Source
AI summary
In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor. The semiconductor device is provided that includes a semiconductor substrate having a first conductivity type drift region, a transistor section provided in the semiconductor substrate, a diode section provided in the semiconductor substrate, a second conductivity type well region exposed at an upper surface of the semiconductor substrate, a temperature sensing unit that is adjacent to the diode section in top view and is provided above the well region, and an upper lifetime control region that is provided in the diode section, at the upper surface side of the semiconductor substrate, and in a region not overlapping with the temperature sensing unit in top view.