Semiconductor Sensor Lens Array for Quantum Efficiency
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Solution Overview
Problem
The challenge in semiconductor image sensors is to enhance quantum efficiency while maintaining or reducing the size of radiation-sensitive pixels, which existing technologies have not adequately addressed.
Innovation Solution
A manufacturing method involving a carrier with a debond layer and buffer layer, where a semiconductor die with a sensor device is encapsulated and connected via a redistribution circuit structure, optimizing the placement and routing of components to enhance light signal reception and processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the size of radiation-sensitive pixels is reduced, then the integration density increases, but the quantum efficiency deteriorates
Solution Approach 1:
The patent introduces a lens array structure positioned above the photodiode array, creating a three-dimensional optical path configuration. This dimensional change allows light to be focused onto the photodiodes through microlenses, effectively increasing the light collection efficiency without increasing the pixel area, thus resolving the contradiction between small pixel size and high quantum efficiency
Solution Approach 2:
The patent employs a nested structure where the lens array is positioned above and aligned with the photodiode array, with each lens corresponding to one or more photodiodes. This nested configuration allows the optical system to be integrated within the existing pixel structure, maximizing light collection while maintaining compact pixel dimensions
2Productivity
If the size of radiation-sensitive pixels is reduced, then the circuit integration density improves, but the light signal intensity deteriorates
Solution Approach 1:
By introducing the lens array at a higher dimensional level above the photodiodes, the patent creates an optical focusing system that concentrates light onto the small photodiode areas. This dimensional separation allows small pixel size for high integration density while maintaining strong light signals through optical concentration
Solution Approach 2:
The patent changes the optical parameters by introducing microlenses with specific focal lengths and aperture sizes that are optimized for the reduced pixel dimensions. These parameter changes enable effective light collection and focusing onto the smaller photodiodes, maintaining signal intensity despite reduced pixel size
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the photo-sensing performance by enhancing the intensity of light signals received by the sensor device, leading to improved quantum efficiency and reliability in semiconductor image sensors.
Implementation Method 1
the photodiodes absorb radiation projected toward the substrate and convert the sensed radiation into electrical signals
Data Source
AI summary
A semiconductor structure includes a semiconductor structure includes a semiconductor die, an insulating encapsulation, a passivation layer and conductive elements. The semiconductor die includes a sensor device and a semiconductor substrate with a first region and a second region adjacent to the first region, and the sensor device is embedded in the semiconductor substrate within the first region. The insulating encapsulation laterally encapsulates the semiconductor die and covers a sidewall of the semiconductor die. The passivation layer is located on the semiconductor die, wherein a recess penetrates through the passivation layer over the first region and is overlapped with the sensor device. The conductive elements are located on the passivation layer over the second region and are electrically connected to the semiconductor die, wherein the passivation layer is between the insulating encapsulation and the conductive elements.