Sensor Package Encapsulant Roughness for Precise TIV Alignment

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Solution Overview

Problem

The semiconductor industry faces manufacturing challenges in aligning and integrating sensing components within compact integrated fan-out packages, which affects the precision and efficiency of semiconductor package formation.

Innovation Solution

The solution involves forming alignment openings on dummy through insulator vias (TIVs) and using patterned dielectric layers to expose sensing components, allowing for precise alignment and integration of conductive patterns and dummy conductive patterns, which serve as alignment marks for subsequent patterning processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If sensing components are integrated into compact integrated fan-out packages, then integration density is improved, but alignment precision deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidalignment precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent introduces dummy through insulator vias (TIVs) as intermediary alignment marks. These dummy TIVs are formed in the encapsulant and serve as reference features for aligning the sensing components during packaging. The alignment marks bridge the gap between the compact package structure and the precise alignment requirement, enabling high integration density without sacrificing alignment precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If alignment openings are formed on dummy TIVs to improve alignment control, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvealignment controlVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dummy through insulator vias serve multiple functions: they act as structural support elements within the encapsulant, provide alignment references for sensing component placement, and serve as markers for subsequent patterning processes. This multi-functionality reduces the need for separate alignment structures, thereby improving alignment control without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Manufacturing precision

If patterned dielectric layers are used to expose sensing components, then alignment precision is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvealignment precisionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The alignment marks and dummy TIVs are formed in advance during the encapsulant formation process, before the sensing components are placed and before subsequent patterning operations. This preliminary preparation of alignment references enables precise alignment in later steps without adding complex real-time alignment mechanisms, thereby improving alignment precision while managing manufacturing complexity through process sequencing.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11764124B2Sensing component encapsulated by an encapsulant with a roughness surface having a hollow region
Publication Date: 2023.09.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11764124B2 patent drawing
  • US11764124B2 patent drawing
  • US11764124B2 patent drawing

AI summary

A semiconductor package includes a semiconductor die including a sensing component, an encapsulant laterally covering the semiconductor die, a through insulator via (TIV) and a dummy TIV penetrating through the encapsulant, a patterned dielectric layer disposed on the top surfaces of the encapsulant and the semiconductor die, a conductive pattern disposed on and inserted into the patterned dielectric layer to be in contact with the TIV and the semiconductor die, and a first dummy conductive pattern disposed on the patterned dielectric layer and connected to the dummy TIV. The top surface of the encapsulant is above and rougher than a top surface of the semiconductor die, and the sensing component is accessibly exposed by the patterned dielectric layer.