Semiconductor Temperature Sensor Linearization via Substrate Heating
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Solution Overview
Problem
Conventional temperature measurement systems using thermopile devices and thermistors face challenges due to the nonlinear relation between output voltage and target temperature, requiring calibration to ensure accurate measurements. Additionally, the integration of thermistors with silicon transducers manufactured by semiconductor processes is difficult, leading to complexities in mass production and enhanced accuracy.
Innovation Solution
A sensing chip integrated into a semiconductor substrate with a silicon transducer and at least one heater, where the silicon transducer and heater are electrically connected to a measuring chip. The measuring chip provides electrical energy to the heater to heat the semiconductor substrate, allowing the silicon transducer to operate at a predetermined temperature for stable transducing characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a thermistor is used to measure ambient temperature of the silicon transducer, then the temperature can be obtained for calibration, but the thermistor cannot be integrated with the silicon transducer using semiconductor manufacturing process, resulting in additional packaging complexity and calibration difficulties
Solution Approach 1:
The patent replaces the thermistor with a diode that is manufactured using the same semiconductor manufacturing process as the silicon transducer. This ensures homogeneity in manufacturing methods, allowing both components to be integrated on the same chip substrate without additional packaging complexity. The diode and silicon transducer are formed simultaneously through compatible fabrication processes, eliminating the integration difficulties associated with mixing different manufacturing technologies.
Solution Approach 2:
The patent changes the type of temperature sensing component from a thermistor to a diode, which has different electrical characteristics that can be measured through voltage-current relationships. This parameter change allows the temperature sensing function to be achieved through a component that is compatible with semiconductor manufacturing, enabling direct integration with the silicon transducer on the same chip.
2Ease of operation
If the output voltage of the silicon transducer is measured directly without heating, then the measurement process is simple, but the nonlinear relation between output voltage and target temperature increases with large ambient temperature differences, requiring calibration
Solution Approach 1:
The patent applies preliminary heating to the silicon transducer using a heater before performing the temperature measurement. This preliminary action raises the ambient temperature of the silicon transducer closer to the target temperature, thereby reducing the temperature difference and minimizing the nonlinear effects. By pre-heating the device, the measurement is performed under conditions where the linear approximation is more valid, reducing calibration requirements.
Solution Approach 2:
The patent changes the ambient temperature parameter of the silicon transducer by applying heat through a heater. This parameter change reduces the temperature difference between the transducer and the target object, thereby reducing the nonlinear relationship between output voltage and target temperature. The heater actively controls the thermal state of the transducer to optimize measurement conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables accurate temperature measurement by linearizing the relation between the output voltage of the silicon transducer and the target temperature, facilitating mass production and enhancing measurement accuracy without the need for additional calibration.
Implementation Method 1
The measuring chip provides an electrical energy to the heater for heating the temperature of the semiconductor substrate
Implementation Method 2
the silicon transducer senses a target temperature
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3~4
AI summary
Provided is a measurement system including: a first chip including at least one first PN junction element adapted to sense a temperature of the first chip; and a second chip electrically connected to the first chip to form a first loop including the first PN junction element. The second chip includes a second loop. The second loop includes at least one second PN junction element adapted to sense a temperature of the second chip. The second chip provides multiple currents in the first loop and the second loop to generate voltage signals associated with the temperature of the first chip and the temperature of the second chip according to the first PN junction element and the second PN junction element and thus calculate the temperature difference between the first chip and the second chip. A measurement method applicable to the measurement system is further provided.