Sensor Thin Film Transistors Sharing Pixel Storage Capacitors
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Solution Overview
Problem
Existing display devices face limitations in panel size and resolution due to noise interference from data signal transitions, requiring separate circuits and signal processing for photo-sensing, which restricts the size and precision of photo-sensing capabilities.
Innovation Solution
Incorporating sensor thin film transistors in every sub-pixel to share storage capacitors with pixel thin film transistors, allowing for photo-sensing and self-image expression without additional circuits or signal processing, thereby improving visibility and precision while eliminating noise interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate circuit such as a lead-out line is used for processing photo sensor output, then photo-sensing capability is achieved, but noise increases due to data signal transitions and panel size is limited
Solution Approach 1:
The patent merges the photo-sensing function with the existing pixel structure by integrating sensor thin film transistors and storage capacitors into the pixel circuit. This combination allows photo-sensing to be performed without separate lead-out lines, eliminating the noise issue while maintaining sensing capability. The sensor transistor shares the storage capacitor with the pixel circuit, creating a unified structure that avoids additional noise-prone connections.
2Reliability
If separate circuits and signal processing are used for photo-sensing, then photo-sensing is enabled, but device complexity and processing requirements increase
Solution Approach 1:
The patent implements multi-functionality by designing the pixel circuit to serve both display and photo-sensing functions. The sensor thin film transistor and storage capacitor are integrated into the existing pixel structure, allowing the same circuit elements to perform both pixel driving and light sensing. This eliminates the need for separate dedicated photo-sensing circuits and reduces overall device complexity.
Solution Approach 2:
The pixel circuit performs photo-sensing using its own internal components without requiring external processing circuits. The sensor transistor generates a signal that is stored in the pixel's storage capacitor, enabling the circuit to self-process the photo-sensing function. This self-service approach eliminates the need for additional signal processing infrastructure.
3Measurement precision
If sensor thin film transistors are integrated into every sub-pixel sharing storage capacitors, then photo-sensing precision and panel size are improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the photo-sensing function into individual sensor thin film transistors located in each sub-pixel. This segmentation allows for precise local measurement while maintaining a systematic manufacturing approach. Each sub-pixel contains its own sensor transistor that can be manufactured using standard thin film transistor processes, making the integration feasible with existing manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables larger and higher-resolution displays without noise interference, saving processing and cost by using only sensor thin film transistors, and enhancing photo-sensing precision across the panel.
Implementation Method 1
a leakage current (off current) is increased, has been developed
Data Source
AI summary
A display device includes a sensing storage line disposed in a first direction; a sensing data line disposed in a second direction; pixel thin film transistors which includes a first gate electrode connected to a gate line, a first source electrode connected to a data line, and a first drain electrode spaced apart from the first source electrode; and sensor thin film transistors which include a second gate electrode connected to the sensing storage line, a second source electrode electrically connected to the sensing data line, and a second drain electrode spaced apart from the second source electrode, wherein the second drain electrode may be electrically connected to the first drain electrode to share a pixel storage capacitor.