Semiconductor-on-insulator thermal conductivity via oxygen diffusion
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Solution Overview
Problem
The manufacturing of Semiconductor-On-Insulator (SeOI) structures with high thermal conductivity faces challenges due to the poor bonding properties of nitride materials, which are good thermal conductors, while oxide materials have better bonding but low thermal conductivity.
Innovation Solution
A process involving heat treatment of a structure comprising a substrate, a high thermal conductivity dielectric layer, and a semiconductor layer, where the oxide layer is diffused through the semiconductor layer to reduce its thickness, allowing for a dielectric layer with high thermal conductivity to act as the sole insulator, ensuring good bonding quality similar to oxide layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a nitride dielectric layer (Si3N4 or SixNyOz) is used to achieve high thermal conductivity, then thermal conductivity is improved, but bonding quality deteriorates due to poor bonding properties of nitride materials
Solution Approach 1:
The dielectric layer is segmented into multiple layers: a lower dielectric layer made of nitride material (high thermal conductivity) and an upper dielectric layer made of oxide material (good bonding properties). This segmentation allows each layer to fulfill its optimal function - the nitride layer provides thermal management while the oxide layer ensures reliable bonding, thus resolving the contradiction between thermal conductivity and bonding quality
Solution Approach 2:
The patent employs a composite dielectric structure combining nitride and oxide materials. The lower layer uses nitride (Si3N4 or similar) for high thermal conductivity (>10 W/cm·K), while the upper layer uses oxide (SiO2 or similar) for excellent bonding characteristics. This composite approach allows the structure to simultaneously achieve both high thermal conductivity and good bonding quality that neither material could provide alone
2Reliability
If an oxide dielectric layer (SiO2) is used to achieve good bonding properties, then bonding quality is improved, but thermal conductivity deteriorates due to low thermal conductivity of oxide materials
Solution Approach 1:
The dielectric function is segmented between two material types: oxide material in the upper layer for bonding and nitride material in the lower layer for thermal conduction. This segmentation allows the oxide layer to provide excellent bonding quality without compromising overall thermal management, as the nitride layer handles the thermal conductivity requirement
Solution Approach 2:
A composite dielectric structure is used where the upper oxide layer (SiO2) provides bonding quality and the lower nitride layer (Si3N4) provides thermal conductivity. The combined structure achieves both good bonding properties and high thermal conductivity, overcoming the limitation of using oxide material alone
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enables the creation of SeOI structures with excellent thermal conductivity and bonding quality, overcoming the limitations of previous methods by maintaining the dielectric layer's properties and allowing for the miniaturization of components with reduced power consumption.
Implementation Method 1
heat treating a structure comprising, successively, a substrate, a dielectric layer having a thermal conductivity substantially higher than that of an oxide layer made of an oxide of a semiconductor material, an oxide layer made of an oxide of a semiconductor material, and a semiconductor layer made of a semiconductor material, in an inert or reducing atmosphere at a temperature and a time sufficient to diffuse an amount of oxygen of the oxide layer through the semiconductor layer so that the thickness of the second oxide layer decreases by a predetermined amount
Data Source
AI summary
The invention relates to a process of treating a structure for electronics or optoelectronics, wherein the structure that has a substrate, a dielectric layer having a thermal conductivity substantially higher than thermal conductivity of an oxide layer made of an oxide of a semiconductor material, an oxide layer made of an oxide of the semiconductor material, and a thin semiconductor layer made of the semiconductor material. The process includes a heat treatment of the structure in an inert or reducing atmosphere with a temperature and a duration chosen for inciting an amount of oxygen of the second oxide layer to diffuse through the semiconductor layer so that the thickness of the second oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics applications through the use of this type of heat treatment.