Separated Gate Electrodes in FinFET Circuit Cells

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving uniformity and matching of gate electrodes in fin field-effect transistors (FinFETs), leading to reduced performance due to non-regular patterns and direct formation of coupled gate electrodes, which affects the overall efficiency and integration of circuit cells.

Innovation Solution

Implementing a regular layout pattern with spaced-apart gate electrodes, using a 'gate cut layer' to separate and align gate electrodes uniformly, and employing a method to form separated gate electrodes, thereby improving the uniformity and matching of gate electrodes in FinFETs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If gate electrodes are directly formed as coupled structures in FinFETs, then manufacturing process is simplified, but uniformity and matching of gate electrodes deteriorates

Engineering Contradiction:

Improvegate electrode formation processVSAvoidgate electrode uniformity and matching

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The gate electrode structure is segmented into separate first and second gate electrodes that are formed independently on opposite sides of the fin structure. This segmentation allows each gate electrode to be formed with consistent dimensions and positioning, improving uniformity and matching while maintaining manufacturing simplicity through standardized formation processes on each side.

Inventive Principle:

Principle #1Segmentation

2Adaptability or versatility

If non-regular patterns are used in gate electrode formation, then design flexibility increases, but performance and integration of circuit cells deteriorates

Engineering Contradiction:

Improvelayout design flexibilityVSAvoidcircuit cell performance

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The layout employs asymmetric positioning of the first and second gate electrodes relative to the fin structure, allowing optimization of each gate's position for its specific function while maintaining overall regularity. This controlled asymmetry provides design flexibility for different circuit configurations while ensuring consistent performance through standardized electrode dimensions and spacing.

Inventive Principle:

Principle #4Asymmetry

Solution Approach 2:

Different regions of the gate electrode structure are given different properties - the first gate electrode on the front side and the second gate electrode on the back side can have different lengths, widths, or positions optimized for their specific local requirements, while maintaining uniform formation processes. This local quality approach enables design flexibility without compromising overall circuit performance.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS20180286884A1Circuit cells having separated gate electrodes

Publication Date: 2018.10.04 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A device includes first circuit cells. Each of the first circuit cells includes isolation transistors, a first type transistor, a second type transistor, and a first gate contact. The isolation transistors are arranged adjacent to another one circuit cell of the plurality of first circuit cells. The first type transistor includes a first gate electrode. The second type transistor includes a second gate electrode, in which the second gate electrode is disposed with respect to the first gate electrode. The first gate contact is coupled between the first gate electrode and the second gate electrode.