Sequencing Chip Surface Layout for Stable DNB Binding

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Solution Overview

Problem

Existing sequencing chips face issues with monomolecular layers on the silicon oxide surface being easily damaged during assembly or usage, affecting performance and increasing costs due to reduced yield and efficiency.

Innovation Solution

A sequencing chip structure using alternately arranged metal oxide and silicon oxide regions on the silicon wafer surface, with metal oxide regions modified for DNB binding and silicon oxide regions modified with a copolymer to enhance specific binding and reduce non-specific adsorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a monomolecular layer is used on the silicon oxide surface for DNB binding, then the chip can be manufactured with standard processes, but the layer is easily damaged during assembly or usage, affecting performance and reducing yield

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidlayer stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent replaces the fragile monomolecular layer with a composite structure consisting of metal oxide regions (for DNB binding) alternately arranged with silicon oxide regions on the silicon wafer surface. This composite material approach provides both the chemical functionality needed for DNB binding and the mechanical stability required during assembly and usage, resolving the contradiction between ease of manufacture and reliability.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If the silicon oxide surface is used without modification, then the manufacturing process is simple, but non-specific adsorption occurs and background optical signal increases, reducing sequencing quality

Engineering Contradiction:
Improveprocess simplicityVSAvoidsequencing quality
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating alternately arranged metal oxide regions and silicon oxide regions on the silicon wafer surface. The metal oxide regions provide specific DNB binding functionality while the silicon oxide regions serve as non-adsorbing background areas. This spatial differentiation of properties reduces non-specific adsorption and background optical signal, improving sequencing quality while maintaining a relatively simple manufacturing process based on standard semiconductor techniques.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The new chip structure improves data output efficiency, enhances sequencing performance, and reduces costs by increasing stability and reliability, while also improving signal emission for better sequencing results.

Implementation Method 1

The DNBs can be selectively adsorbed by the aminated regions and repelled by the HMDS regions, and thus they can be arranged in an array to form a DNB array on the surface

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

silicon oxide regions modified with a copolymer to enhance specific binding and reduce non-specific adsorption

Methodology Applied
Scientific EffectSteric repulsion:

Data Source

PatentUS12538721B2Sequencing chip and manufacturing method therefor
Publication Date: 2026.01.27 SHENZHEN HUADA GENE INST
  • US12538721B2 patent drawing
  • US12538721B2 patent drawing
  • US12538721B2 patent drawing

AI summary

Provided are a chip matrix, a sequencing chip, and a manufacturing method thereof. The chip matrix includes: a wafer layer (111), the wafer layer (111) having cutting lines that are evenly distributed thereon; a first silicon oxide layer (112), the first silicon oxide layer (112) being made of silicon oxide and formed on an upper surface of the wafer layer (111); a transition metal oxide layer (113), the transition metal oxide layer (113) being made of transition metal oxide and formed on an upper surface of the first silicon oxide layer (112). The chip matrix has characteristics such as resistances against high temperature, high humidity and other harsh environments. Meanwhile, by changing pH, surfactant and other components of a solution containing sequences to be sequenced, a surface functional region of the chip matrix can specifically adsorb a sequence to be sequenced.