Sequential Block Writing in Non-Volatile Memory
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Solution Overview
Problem
Contactless passive integrated circuits for RFID applications face challenges in increasing their range due to high power consumption, particularly from the memory, which is exacerbated by the need for high voltage programming latches that consume energy and have leakage issues, making them unsuitable for long-range applications.
Innovation Solution
A method for block programming in non-volatile memory that involves sequentially writing each word of a block over a controlled time period, using a gradually increasing high voltage, with the duration of the voltage ramp proportional to the write time, to reduce power consumption and maintain reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high voltage programming latches are used to enable simultaneous block writing, then writing speed is improved, but power consumption increases
Solution Approach 1:
The block writing operation is divided into multiple sequential word writing operations. Instead of using parallel programming latches to write multiple words simultaneously, the patent writes one word at a time in sequence, eliminating the need for multiple high-voltage latches and their associated power consumption while maintaining the block writing functionality through sequential execution.
Solution Approach 2:
The patent removes the high-voltage programming latches from the system architecture. By implementing sequential word writing, the complex high-voltage latch circuitry is extracted and replaced with simpler control logic that manages single-word writing operations in sequence, thereby eliminating the primary source of high power consumption.
2Productivity
If high voltage is applied to programming latches for block writing, then writing capability is improved, but leakage rate increases
Solution Approach 1:
The high-voltage programming latches that cause leakage are completely removed from the system. The patent replaces them with a sequential writing approach that uses standard-voltage control logic to manage the writing process, eliminating the leakage issue inherent in parallel high-voltage latch architectures.
3Productivity
If memory cells are programmed simultaneously using multiple programming latches, then block writing efficiency is improved, but active surface area increases
Solution Approach 1:
The block writing function is segmented into sequential single-word operations. Instead of allocating physical hardware resources (multiple programming latches) to handle parallel writing of multiple words, the patent uses time-division multiplexing where a single writing mechanism operates sequentially on different words, thereby maintaining block writing capability without increasing the physical active surface area.
4Productivity
If the number of programming latches is increased to support block writing, then block writing capability is improved, but power consumption increases
Solution Approach 1:
The patent segments the block writing operation into sequential word-level operations, allowing a single programming mechanism to serve multiple words over time. This eliminates the need to instantiate multiple parallel programming latches, thereby maintaining block writing capability while avoiding the power consumption penalty of having multiple active high-voltage latch circuits simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the power consumption of the memory by optimizing the write cycle duration and voltage application, enhancing the range of contactless passive integrated circuits while maintaining programming reliability.
Implementation Method 1
The high voltage is produced by a high voltage generator using the energy received by the integrated circuit.
Implementation Method 2
Passive integrated circuits of the second type are electrically powered by a UHF electric field oscillating at several hundred MHz
Data Source
AI summary
A method is provided for block writing in an electrically programmable non-volatile memory, in which a block to be written in the memory includes at least one word. The method includes determining a word write time by dividing a fixed block write time by the number of words in the block to be written, and controlling the memory to successively write each word in the memory during the write time.