Substrate Film Processing with Sequential Gas Supply Selectivity
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in selectively forming films on specific surfaces of substrates while minimizing deposition on other surfaces, due to uniform gas distribution and reaction kinetics.
Innovation Solution
A substrate processing technique involving non-simultaneous supply of a first gas containing a first element and a reaction gas, with controlled incubation times and removal processes, to preferentially form a film on one surface over another by adjusting gas supply and reaction conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform gas distribution is used in substrate processing, then film formation is achieved across all surfaces, but selectivity between different surfaces deteriorates
Solution Approach 1:
The patent applies periodic action by sequentially supplying different gases in distinct time periods. A first gas is supplied during a first period to form substance X on specific surfaces, then a second gas is supplied during a second period to remove substance X from non-conductive surfaces. This time-separated periodic supply enables selective film formation by exploiting differential incubation times and removal rates on conductive versus non-conductive surfaces.
2Productivity
If reaction gas is supplied simultaneously with precursor gas, then film formation rate increases, but selectivity control deteriorates
Solution Approach 1:
The patent implements periodic action by dividing gas supply into distinct temporal phases. The precursor gas (first gas) is supplied during a first period without simultaneous reaction gas, allowing selective adsorption and incubation on conductive surfaces. Then a second period begins with reaction gas supply to trigger removal of substance X from non-conductive surfaces. This sequential periodic supply decouples film formation and removal processes, enabling both high selectivity and controlled productivity.
Solution Approach 2:
The patent applies preliminary action by first supplying the precursor gas and allowing substance X to incubate and adsorb onto substrate surfaces before introducing the reaction gas. This preliminary incubation period on conductive surfaces creates a reservoir of reactive substance that can then be selectively removed in the subsequent phase, ensuring that film formation occurs only where intended before the removal process begins.
3Manufacturing precision
If long incubation time is used for film formation, then film quality improves, but processing time increases
Solution Approach 1:
The patent converts the potential harm of prolonged incubation time into a benefit by exploiting the differential response of conductive versus non-conductive surfaces. The extended incubation period allows substance X to accumulate on conductive surfaces where film formation is desired, while simultaneously enabling complete removal from non-conductive surfaces through the subsequent reaction gas phase. This converts what would normally be a time-wasting step into a selective filtering mechanism that improves both film quality and process efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables selective film formation on conductive surfaces while minimizing deposition on non-conductive surfaces, improving selectivity and film uniformity without damaging the substrate.
Implementation Method 1
supplying a first gas containing a first element to a substrate to form substance X containing the first element on the substrate
Implementation Method 2
supplying a first reaction gas that reacts with the substance X to the substrate
Data Source
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AI summary
There is provided a technique that includes forming a film (500) containing a first element on at least a portion of a substrate (200) having a first surface (300) and a second surface (400), which are made of different substances, by performing a first cycle a first number of times, the first cycle including non-simultaneously performing: (a1) supplying a first gas containing the first element to the substrate (200) to form a substance X containing the first element on the at least a portion of the substrate (200); and (a2) supplying a first reaction gas, which reacts with the substance X, to the substrate (200), wherein an incubation time of the first gas on the second surface (400) is longer than an incubation time of the first gas on the first surface (300), and in (a1), at least a portion of the substance X formed on the substrate (200) is removed.