Sequential Infiltration Patterning for Etch-Resistant Polymer Resists
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Solution Overview
Problem
Current patterning techniques for semiconductor devices, such as spacer defined quadruple patterning and extreme ultraviolet lithography, face challenges with high line-edge roughness and low etch resistance due to the use of thin polymer resists, making it difficult to transfer patterns to underlying layers effectively.
Innovation Solution
A sequential infiltration apparatus is developed, comprising a reaction chamber, a precursor distribution and removal system, and a sequence controller that controls the infiltration of precursors into an infiltrateable material on a substrate, allowing for tuned infiltration by varying the periods of precursor introduction and removal to enhance depth and prevent surface deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a thin polymer resist layer is used to achieve high resolution patterning, then resolution is improved, but etch resistance deteriorates and line edge roughness increases
Solution Approach 1:
The patent applies nested doll by infiltrating a first material into the polymer resist layer, then infiltrating a second material into the first material, creating nested layers within the resist structure. This multi-layer infiltration approach enhances etch resistance while preserving the thin profile and high resolution of the original polymer resist layer.
Solution Approach 2:
The patent creates a composite material structure by combining the polymer resist with infiltrated materials (such as metal nanoparticles or molecular precursors). This composite approach maintains the resolution benefits of the thin polymer layer while adding the etch resistance properties of the infiltrated materials, thereby resolving the contradiction between resolution and etch resistance.
2Measurement precision
If a thin polymer resist layer is used to achieve high resolution patterning, then resolution is improved, but line edge roughness increases
Solution Approach 1:
The nested infiltration of additional materials into the polymer resist layer serves to smooth and define the edges of the patterned features. The infiltrated materials fill in roughness at the line edges, thereby reducing line edge roughness while maintaining the high resolution capability of the thin polymer resist.
Solution Approach 2:
The patent changes the physical and chemical parameters of the resist structure through infiltration. By introducing additional materials with different properties (such as surface energy, viscosity, or etch selectivity), the line edge roughness parameter is improved while the resolution parameter is maintained.
3Length of stationary object
If infiltration time is extended to enable deep infiltration of precursors, then infiltration depth is improved, but process time increases
Solution Approach 1:
The patent employs periodic action by using sequential infiltration cycles with alternating precursors. Instead of continuous long-duration infiltration, the process uses repeated short cycles of precursor introduction and removal, which achieves deep infiltration over time while maintaining reasonable overall process time through efficient cycling.
Solution Approach 2:
The patent changes process parameters such as precursor concentration, temperature, and pressure to optimize infiltration rate. By adjusting these parameters, deep infiltration is achieved more rapidly, reducing the time required while maintaining adequate infiltration depth.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus improves the etch resistance and line-edge roughness of patterned structures by deep infiltration of precursors, enabling more effective pattern transfer and enhancing the quality of patterned layers on semiconductor substrates.
Implementation Method 1
a precursor distribution and removal system to provide to and remove from the reaction chamber a gaseous first or second precursor
Implementation Method 2
activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber
Implementation Method 3
execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber
Data Source
AI summary
A sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to hold at least a first substrate;a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and,a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by:activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber;activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and,activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.