SERDES Memory Read Timing Circuit for Frequency-Adaptive Output
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Solution Overview
Problem
Conventional SERDES type semiconductor memory apparatuses face challenges in maintaining operational efficiency and reducing bus line requirements due to fixed time intervals for write/read operations, which can lead to data transmission issues and malfunctions, especially at high frequencies.
Innovation Solution
A control circuit for a read operation in a SERDES type semiconductor memory apparatus that dynamically adjusts data output time intervals in synchronization with the operational frequency, using first and second delay units to generate delay signals and pipe latch control signals, ensuring non-overlapping data transmission and storage times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a fixed time interval is used for write/read operations in SERDES type semiconductor memory apparatus, then the operation can be simple and stable at low frequencies, but the apparatus cannot adapt to high-frequency operations and always operates with predetermined minimum margin
Solution Approach 1:
The patent implements dynamic adjustment of the time interval between first and second column selection signals based on the operational frequency of the semiconductor memory apparatus. The control circuit dynamically changes the time interval according to the frequency, allowing the system to adapt to varying operational conditions rather than using a fixed time interval, thereby resolving the contradiction between adaptability and complexity.
Solution Approach 2:
The patent changes the time interval parameter between column selection signals based on the operational frequency. By adjusting this temporal parameter dynamically, the system can optimize performance across different frequency ranges without requiring a completely different control architecture, thus improving adaptability while controlling complexity.
2Speed
If the time interval between column selection signals is fixed for high-frequency operation, then the operation can be fast, but the apparatus loses operational margin and may malfunction
Solution Approach 1:
The control circuit dynamically adjusts the time interval between column selection signals based on the actual operational frequency. At high frequencies, the time interval is reduced to maintain fast operation, while at lower frequencies, the time interval is increased to provide sufficient operational margin, thus resolving the contradiction between speed and reliability.
Solution Approach 2:
The system uses feedback from the operational frequency to adjust the time interval between column selection signals. The control circuit monitors the operational frequency and adjusts the timing accordingly, ensuring that the time interval provides adequate margin for reliable operation while maintaining high speed when conditions permit.
3Reliability
If dynamic adjustment of data output time interval is implemented, then the operational margin is ensured across frequencies, but the control circuit complexity increases
Solution Approach 1:
The patent adjusts the delay time parameter in the delay unit based on the operational frequency. By dynamically changing this single critical parameter, the system ensures adequate operational margin across different frequencies without implementing complex control logic, thus resolving the contradiction between reliability and complexity.
Solution Approach 2:
The delay unit serves multiple functions: it provides the necessary delay for timing alignment and simultaneously allows dynamic adjustment of the delay duration based on frequency. This multi-functionality reduces the need for separate control circuits for different timing requirements, thereby managing complexity while ensuring operational margin.
Data Source
AI summary
A control circuit for a read operation of a SERDES (SERializer and DESeriallizer) type semiconductor memory apparatus is disclosed that includes a first delay unit that is configured to generate and output a first delay signal to a first global input/output line driver by receiving a sensing-enable signal ‘IOSTB’, and to generate and output a second delay signal to a second global input/output line driver by receiving the sensing-enable signal. The first delay unit generates the second delay signal by delaying the sensing-enable signal in synchronization with a clock. The semiconductor memory apparatus also includes a second delay unit configured to generate a pipe latch control signal in response to the first delay signal and the second delay signal.