Serial Capacitor Memory Cell Filament Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory cells, particularly programmable metallization cell (PMC) based memory devices, face challenges in achieving improved performance and density due to limitations in programmable materials that retain resistive states without refresh, necessitating the development of new memory cells and architectures.
Innovation Solution
The development of novel memory cells incorporating PMC-type structures with ion conductive materials between conductive electrodes, where the electrodes have electrochemically active and inactive surfaces, and the use of serially connected capacitors to manage filament formation and prevent short circuits, enabling reversible switching between high and low resistance states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If programmable metallization cell (PMC) based memory devices are used, then nonvolatile memory functionality is achieved, but component count and device complexity increase
Solution Approach 1:
The patent merges the PMC structure with transistor components into an integrated memory device where the ion conductive material is positioned between the source and drain regions of the transistor. This integration allows the memory functionality to be combined with the transistor in a single device structure, reducing the need for separate components while maintaining nonvolatile memory operation through filament formation and dissolution in the ion conductive material.
2Adaptability or versatility
If ion conductive material is used between electrodes, then reversible switching between resistance states is enabled, but risk of short circuits through filament formation increases
Solution Approach 1:
The patent segments the ion conductive material into distinct regions positioned between specific transistor components (source and drain regions). This segmentation allows the filament formation to be localized to specific areas where it can be controlled and reversed, enabling reliable switching between resistance states while preventing uncontrolled short circuits. The filament can form in one region during write operations and be dissolved during erase operations, providing reversible switching with controlled reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of nonvolatile memory cells with improved density and reduced component count, enabling efficient storage and retrieval of data by controlling filament formation and capacitance, thus enhancing the performance and reliability of memory arrays.
Implementation Method 1
A suitable voltage applied across the electrodes generates current conductive super-ionic clusters or conducting filaments. Such result from ion transport through the ion conductive material which grows the clusters/filaments from one of the electrodes (the cathode), through the ion conductive material, and toward the other electrode (the anode).
Implementation Method 2
A suitable voltage applied across the electrodes generates current conductive super-ionic clusters or conducting filaments. Such result from ion transport through the ion conductive material which grows the clusters/filaments from one of the electrodes (the cathode)
Data Source
AI summary
Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors includes a region of a semiconductor substrate and a dielectric between such region and the common electrode. The other of the capacitors includes a second electrode and ion conductive material between the second electrode and the common electrode. At least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Some embodiments include memory cells having two capacitors connected in series, and some embodiments include memory arrays containing such memory cells.