Series P-N LED Component for Lower-Power Micro-LED Driving
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Solution Overview
Problem
Active-matrix micro-LED displays face challenges with higher power consumption due to single diode structure driving approaches, and defective diodes require entire LED component replacement, leading to additional costs.
Innovation Solution
The integration of multiple P-N diode structures in series within a single LED component, where each diode structure includes p-type and n-type doping layers, allows for efficient light emission with reduced power consumption and enables selective operation of non-defective diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If multiple P-N diode structures are integrated in series within a single LED component, then power consumption is reduced and reliability is improved, but device complexity increases
Solution Approach 1:
The LED component is segmented into multiple P-N diode structures (first P-N diode, second P-N diode, etc.) that are coupled in series. Each diode structure includes its own p-type doping layer, n-type doping layer, and active region. This segmentation allows the total forward voltage to be distributed across multiple diodes, enabling operation at lower current levels and reducing power consumption while maintaining the required brightness output.
Solution Approach 2:
Multiple P-N diode structures are merged into a single integrated LED component rather than using separate components. The diodes are laterally arranged and electrically coupled in series within one component, combining the functionality of multiple diodes into a unified structure that reduces the number of external connections and simplifies the overall system integration.
2Reliability
If multiple P-N diode structures are integrated in series within a single LED component, then reliability is improved by allowing bypass of defective diodes, but device complexity increases
Solution Approach 1:
The LED component is segmented into multiple independently functional P-N diode structures that are electrically coupled in series. This segmentation creates modular units where each diode can be independently controlled or bypassed. When one diode becomes defective, the system can selectively activate or bypass that specific diode while maintaining operation of the remaining diodes, thereby preserving overall component functionality and improving reliability.
3Ease of manufacture
If multiple P-N diode structures are integrated in series within a single LED component, then manufacturing cost is reduced by avoiding entire component replacement, but device complexity increases
Solution Approach 1:
The LED component is segmented into multiple P-N diode structures that can be independently controlled. This segmentation enables selective operation of individual diodes based on their functional status. When a diode becomes defective, the system can bypass that specific diode and continue operating with the remaining functional diodes, eliminating the need to replace the entire LED component and thereby reducing manufacturing and maintenance costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption by allowing smaller currents to achieve the same brightness and allows for the bypassing of defective diodes without replacing the entire LED component, thereby minimizing costs and maintaining display functionality.
Implementation Method 1
multiple P-N diode structures, which are coupled in series with each other, laterally arranged to be adjacent to each other, and integrated on the body. The P-N diode structures comprise multiple p-type doping layers and multiple n-type doping layers
Data Source
AI summary
The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.