Series-Connected Semiconductor Switches for High-Voltage Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-voltage semiconductor switches face challenges in achieving optimal breakdown voltage and on-resistance, requiring large transistor areas and specific designs for each voltage level, leading to inefficiencies and limitations in accommodating higher voltages.
Innovation Solution
A high-voltage electrical switch design featuring series-connected semiconductor switches isolated by trenches, with a radio frequency signal generator and galvanic isolators, allowing for flexible combination of switches to achieve desired breakdown voltages and reducing the overall area and cost by using standardized sub-elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a single high-voltage transistor is designed to achieve high breakdown voltage, then the breakdown voltage increases, but the transistor area increases significantly (5-5.7 times larger for doubling voltage)
Solution Approach 1:
The patent divides a single high-voltage transistor into multiple lower-voltage transistors connected in series. Each transistor operates at a lower voltage stress, allowing smaller individual areas while achieving the same total breakdown voltage through series combination, thereby reducing the overall device area compared to a single high-voltage transistor.
Solution Approach 2:
The patent introduces a series connection topology dimension to the transistor architecture. Instead of scaling up a single transistor in two dimensions to achieve higher voltage, the solution moves to a multi-dimensional arrangement where multiple transistors are stacked in series, distributing voltage stress across multiple devices and reducing the area required per unit voltage.
2Adaptability or versatility
If different transistor sizes are designed for different voltage levels (20V, 60V, 100V), then each voltage level can be optimized, but the device complexity and design qualification requirements increase
Solution Approach 1:
The patent creates a universal transistor design that can be used across multiple voltage levels by connecting identical or similar transistors in series. A single standardized transistor design serves multiple functions by being replicated and series-connected to achieve different total voltage ratings, eliminating the need to design and qualify separate optimized transistors for each voltage level.
Solution Approach 2:
The patent achieves different voltage levels by changing the number of transistors in series rather than changing the transistor design parameters themselves. The same transistor design can be configured in different series combinations (e.g., 1, 2, or 3 transistors) to achieve various voltage ratings, simplifying design while maintaining adaptability to different voltage requirements.
3Ease of manufacture
If transistor area is reduced to lower cost, then cost decreases, but the breakdown voltage capability is limited
Solution Approach 1:
The patent segments the high-voltage capability into multiple smaller transistor units, each with lower individual breakdown voltage but smaller area and lower cost. By connecting these segments in series, the overall device achieves high breakdown voltage capability while using smaller, less expensive transistor components, thereby reducing total manufacturing cost compared to a single large high-voltage transistor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design provides greater flexibility and reduces the size and cost of high-voltage switches by allowing the combination of standardized semiconductor switches to achieve higher breakdown voltages, while maintaining low on-resistance, thus overcoming the limitations of traditional designs.
Implementation Method 1
the plurality of semiconductor switches are isolated from one another by a plurality of isolation trenches, each said isolation trench surrounding at least one of the semiconductor switches
Implementation Method 2
a plurality of rectifiers wherein each rectifier is connected to a semiconductor switch control input of one of the semiconductor switches
Implementation Method 3
a plurality of galvanic isolators, wherein each galvanic isolator connects the radio frequency signal generator to one of the plurality of rectifiers
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A high voltage electrical switch including: a plurality of series connected semiconductor switches (110, 112, 114); a plurality of rectifiers (120, 122, 124) wherein each rectifier is connected to a semiconductor switch control input of one of the semiconductor switches (110, 112, 114); a radio frequency signal generator (140); and a plurality of galvanic isolators (130, 132, 134), wherein each galvanic isolator connects the radio frequency signal generator (140) to one of the plurality of rectifiers (120, 122, 124), wherein the plurality of semiconductor switches (110, 112, 114) are isolated from one another.