Serpentine Conductive Feature in Semiconductor Device
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating an improvement in the manufacturing process to address these issues.
Innovation Solution
A semiconductor device structure featuring a conductive pad with a serpentine conductive feature penetrating through multiple mask layers, including a diamond-like carbon material with sp3 bonding, and an implantation process to introduce a doping species like carbon, which reduces stress and improves device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the manufacturing process integrates more semiconductor devices with greater functionality, then the device functionality and integration capability are improved, but the manufacturing complexity increases
Solution Approach 1:
The patent divides the mask structure into multiple distinct layers (first mask layer and second mask layer made of different materials), allowing each layer to serve specific functions in the manufacturing process. This segmentation enables more complex device integration while managing manufacturing complexity by organizing the process into discrete, manageable steps.
Solution Approach 2:
The patent employs a composite mask structure where the first mask layer and second mask layer are made of different materials, each optimized for specific process requirements. This composite approach allows the manufacturing process to handle greater device functionality while maintaining control over manufacturing complexity through material-specific process optimization.
2Stability of the object's composition
If the conductive feature uses a serpentine pattern, then the stress in the mask layers is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent implements a serpentine (curved) pattern for the conductive feature instead of a straight line. This curved geometry allows stress to be distributed and relieved along the meandering path, reducing overall stress in the mask layers. The curvature transforms the stress management approach from rigid to flexible, accommodating thermal and mechanical stresses.
Solution Approach 2:
The patent changes the geometric parameters of the conductive feature from a simple straight configuration to a serpentine pattern with specific width and curvature characteristics. This parameter change enables stress reduction while the multi-layer mask structure provides the precision control needed to achieve the desired pattern accuracy.
3Reliability
If an implantation process is used to introduce doping species into the mask layer, then the device performance is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent performs the implantation process to introduce doping species into the mask layer before forming the final conductive feature structure. This preliminary action modifies the mask layer properties in advance, improving device performance by optimizing stress characteristics and electrical properties before subsequent manufacturing steps.
Solution Approach 2:
The mask layer serves as an intermediary structure that receives the implantation process. By doping the mask layer rather than directly processing the conductive feature, the patent improves device performance while managing process complexity through a controlled intermediate step that can be optimized independently.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The serpentine conductive feature and doping process enhance the semiconductor device's performance by reducing stress in the mask layers, thereby improving overall device functionality and integration efficiency.
Implementation Method 1
performing an implantation process to introduce a doping species into the second mask layer
Implementation Method 2
the second mask layer includes a diamond-like carbon material having sp3 bonding
Data Source
AI summary
The present disclosure relates to a semiconductor device structure with a serpentine conductive feature and a method for forming the semiconductor device structure. The semiconductor device structure includes a conductive pad disposed in a semiconductor substrate, and a first mask layer disposed over the semiconductor substrate. The semiconductor device structure also includes a second mask layer disposed over the first mask layer. The first mask layer and the second mask layer are made of different materials. The semiconductor device structure further includes a conductive feature penetrating through the first mask layer and the second mask layer to connect to the conductive pad. The conductive feature has a serpentine pattern in a top view.