Serpentine Flow Guide Kits for Uniform Semiconductor Deposition
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in adjusting process parameters such as gas flow rates and pressures for deposition uniformity, particularly at low rotation speeds and high pressures, and cleaning processing chamber components is difficult.
Innovation Solution
The implementation of flow guides and process kits that include plates with fin sets to define serpentine flow paths, allowing for adjustable gas flow and cleaning mechanisms, including a middle plate with flanges and a cover to facilitate uniform deposition and cleaning operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrate rotation is used to improve deposition uniformity, then deposition uniformity is improved, but adjustment difficulty increases
Solution Approach 1:
The processing chamber is divided into multiple independent gas flow zones using flow guides and baffles, allowing each zone to be controlled separately. This segmentation enables deposition uniformity to be adjusted by modifying gas flow distribution in specific areas rather than rotating the entire substrate, thereby improving ease of operation while maintaining manufacturing precision.
Solution Approach 2:
The system employs adjustable gas flow rates and pressures through controllable valves and flow meters, allowing dynamic adjustment of deposition parameters. This replaces static substrate rotation with dynamic gas flow control, making it easier to adjust deposition uniformity in real-time without mechanical rotation complications.
2Strength
If low rotation speeds are used to reduce mechanical stress, then mechanical stress is reduced, but adjustment difficulty increases
Solution Approach 1:
The patent replaces the mechanical substrate rotation system with a gas flow-based control system. By using adjustable gas flows to control deposition distribution, the system eliminates the need for mechanical rotation entirely, reducing mechanical stress while improving ease of operation through simple valve and flow meter adjustments.
3Ease of operation
If high pressures are used to improve gas flow control, then gas flow control is improved, but cleaning difficulty increases
Solution Approach 1:
The flow guides and baffles are designed as removable components that can be extracted from the processing chamber for separate cleaning. This allows the gas flow control components to be easily removed and cleaned outside the chamber, resolving the contradiction between improved gas flow control under pressure and the difficulty of cleaning these components in-situ.
Solution Approach 2:
The system includes preliminary cleaning features such as accessible cleaning ports and removable components that allow cleaning to be performed before contamination becomes severe. This preliminary maintenance approach makes cleaning easier while maintaining the high pressure gas flow control capabilities during operation.
4Manufacturing precision
If low flow rates are used to improve deposition precision, then deposition precision is improved, but cleaning efficiency decreases
Solution Approach 1:
The system uses dynamic gas flow control with independently adjustable flow rates for different zones. During deposition, low flow rates provide precise control for high manufacturing precision. During cleaning, the same system can switch to high flow rates to rapidly remove contaminants, thereby maintaining deposition precision while improving cleaning efficiency through parameter switching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances deposition uniformity by mitigating the effects of substrate rotation and allows for efficient cleaning at high pressures and low flow rates, reducing operational costs and improving process uniformity.
Implementation Method 1
The flow path has a serpentine pattern between the first fin set and the second fin set
Implementation Method 2
heating a substrate positioned on a substrate support
Implementation Method 3
flowing one or more process gases over the substrate to form one or more layers on the substrate
Data Source
AI summary
The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.


