Serpentine Flow Guide Kits for Uniform Semiconductor Deposition

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Solution Overview

Problem

Existing semiconductor processing technologies face challenges in adjusting process parameters such as gas flow rates and pressures for deposition uniformity, particularly at low rotation speeds and high pressures, and cleaning processing chamber components is difficult.

Innovation Solution

The implementation of flow guides and process kits that include plates with fin sets to define serpentine flow paths, allowing for adjustable gas flow and cleaning mechanisms, including a middle plate with flanges and a cover to facilitate uniform deposition and cleaning operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If substrate rotation is used to improve deposition uniformity, then deposition uniformity is improved, but adjustment difficulty increases

Engineering Contradiction:
Improvedeposition uniformityVSAvoidadjustment difficulty
Core Design Contradiction:
Manufacturing precisionVSEase of operation

Solution Approach 1:

The processing chamber is divided into multiple independent gas flow zones using flow guides and baffles, allowing each zone to be controlled separately. This segmentation enables deposition uniformity to be adjusted by modifying gas flow distribution in specific areas rather than rotating the entire substrate, thereby improving ease of operation while maintaining manufacturing precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system employs adjustable gas flow rates and pressures through controllable valves and flow meters, allowing dynamic adjustment of deposition parameters. This replaces static substrate rotation with dynamic gas flow control, making it easier to adjust deposition uniformity in real-time without mechanical rotation complications.

Inventive Principle:
Principle #15Dynamics

2Strength

If low rotation speeds are used to reduce mechanical stress, then mechanical stress is reduced, but adjustment difficulty increases

Engineering Contradiction:
Improvemechanical stressVSAvoidadjustment difficulty
Core Design Contradiction:
StrengthVSEase of operation

Solution Approach 1:

The patent replaces the mechanical substrate rotation system with a gas flow-based control system. By using adjustable gas flows to control deposition distribution, the system eliminates the need for mechanical rotation entirely, reducing mechanical stress while improving ease of operation through simple valve and flow meter adjustments.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Ease of operation

If high pressures are used to improve gas flow control, then gas flow control is improved, but cleaning difficulty increases

Engineering Contradiction:
Improvegas flow controlVSAvoidcleaning difficulty
Core Design Contradiction:
Ease of operationVSEase of repair

Solution Approach 1:

The flow guides and baffles are designed as removable components that can be extracted from the processing chamber for separate cleaning. This allows the gas flow control components to be easily removed and cleaned outside the chamber, resolving the contradiction between improved gas flow control under pressure and the difficulty of cleaning these components in-situ.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The system includes preliminary cleaning features such as accessible cleaning ports and removable components that allow cleaning to be performed before contamination becomes severe. This preliminary maintenance approach makes cleaning easier while maintaining the high pressure gas flow control capabilities during operation.

Inventive Principle:
Principle #10Preliminary action

4Manufacturing precision

If low flow rates are used to improve deposition precision, then deposition precision is improved, but cleaning efficiency decreases

Engineering Contradiction:
Improvedeposition precisionVSAvoidcleaning efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The system uses dynamic gas flow control with independently adjustable flow rates for different zones. During deposition, low flow rates provide precise control for high manufacturing precision. During cleaning, the same system can switch to high flow rates to rapidly remove contaminants, thereby maintaining deposition precision while improving cleaning efficiency through parameter switching.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances deposition uniformity by mitigating the effects of substrate rotation and allows for efficient cleaning at high pressures and low flow rates, reducing operational costs and improving process uniformity.

Implementation Method 1

The flow path has a serpentine pattern between the first fin set and the second fin set

Methodology Applied
Scientific EffectSerpentine flow pattern:

Implementation Method 2

heating a substrate positioned on a substrate support

Methodology Applied
Scientific EffectThermal heating: Heating

Implementation Method 3

flowing one or more process gases over the substrate to form one or more layers on the substrate

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20250323027A1Process kits and related methods for processing chambers to facilitate deposition process adjustability
Publication Date: 2025.10.16 APPLIED MATERIALS INC
  • US20250323027A1 patent drawing
  • US20250323027A1 patent drawing
  • US20250323027A1 patent drawing

AI summary

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.