Serpentine Flow Guide Layout for Adjustable Deposition Uniformity
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in adjusting process parameters such as gas flow rates and pressures for deposition uniformity, especially at low rotation speeds and high pressures, and cleaning processing chamber components is difficult.
Innovation Solution
The use of flow guides and process kits with specific fin configurations and movable plates to facilitate adjustable gas flow paths and separate cleaning paths within processing chambers, allowing for improved deposition uniformity and chamber cleanliness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas flow rates and pressures are adjusted for deposition uniformity, then deposition uniformity is improved, but device complexity increases
Solution Approach 1:
The processing chamber is divided into multiple zones using flow guides and fin structures. The flow guide divides the gas flow into multiple paths, allowing independent control of gas distribution in different regions of the substrate, thereby achieving uniform deposition without complex overall system adjustments
Solution Approach 2:
Fins are strategically positioned at specific locations within the chamber to create localized flow patterns. This allows targeted adjustment of gas flow characteristics in specific areas to compensate for non-uniform deposition, improving overall uniformity through local modifications rather than global system changes
2Manufacturing precision
If substrate rotation is used to improve deposition uniformity, then deposition uniformity is improved, but ease of operation deteriorates
Solution Approach 1:
The patent extracts the rotation function from the substrate and replaces it with stationary flow control structures. The flow guides and fins create moving gas flow patterns that achieve uniform deposition without requiring physical substrate rotation, simplifying operation
Solution Approach 2:
The flow guide acts as an intermediary between the gas source and substrate, creating complex gas flow patterns that would be difficult to achieve directly. This intermediary structure enables uniform deposition through controlled gas dynamics rather than mechanical substrate movement
3Manufacturing precision
If cleaning components of processing chambers is performed, then chamber cleanliness is improved, but loss of time increases
Solution Approach 1:
The flow guide design incorporates features that prevent contaminant accumulation during the deposition process. By maintaining continuous gas flow and preventing stagnant zones, the system reduces the need for frequent cleaning operations, saving time while maintaining cleanliness
Solution Approach 2:
The gas flow patterns created by the flow guide and fins continuously sweep across chamber surfaces, providing self-cleaning action during normal operation. This automatic cleaning mechanism maintains chamber cleanliness without requiring separate cleaning cycles, reducing time loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables deposition process adjustability at low rotation speeds and high pressures with reduced interference from substrate rotation, enhances cleaning efficiency, and maintains uniformity and throughput in semiconductor processing.
Implementation Method 1
flowing one or more process gases over the substrate to form one or more layers on the substrate
Implementation Method 2
heating a substrate positioned on a substrate support
Data Source
AI summary
The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.