Serpentine Polysilicon Resistor Layout for Stable MOS Integration

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Solution Overview

Problem

Integration issues exist when combining polysilicon resistors and metal-oxide-semiconductor (MOS) transistors on a single IC chip, necessitating an improved polysilicon resistor structure.

Innovation Solution

A serpentine-shaped resistor design with a width of at least 3.6 μm is introduced, which provides high resistance and mitigates rounding effects, allowing integration with MOS transistors while maintaining stability and reducing area cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If polysilicon resistors are combined with MOS transistors on a single IC chip, then integration is achieved, but integration issues and instability occur

Engineering Contradiction:

Improveintegration capabilityVSAvoidresistor stability

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The resistor is designed with a serpentine shape consisting of multiple repeating segments connected in series. This segmentation allows the resistor to achieve high resistance values while maintaining stability and compatibility with MOS transistor integration on the same IC chip.

Inventive Principle:

Principle #1Segmentation

2Area of stationary object

If traditional resistor designs are used, then area cost is reduced, but resistance stability and performance are compromised

Engineering Contradiction:

Improveresistor areaVSAvoidresistance stability

Core Design Contradiction:

Area of stationary objectVSReliability

Solution Approach 1:

The resistor employs a serpentine shape with curved segments instead of straight lines. This curvature design mitigates rounding effects at corners and edges, thereby improving resistance stability while maintaining compact area utilization for IC integration.

Inventive Principle:

Principle #14Spheroidality (Curvature)

3Manufacturing precision

If high resistance values are achieved through traditional means, then resistance is increased, but area cost and integration complexity increase

Engineering Contradiction:

Improveresistance valueVSAvoidresistor area

Core Design Contradiction:

Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The resistor transitions from a simple linear configuration to a two-dimensional serpentine pattern with repeating segments. This dimensional change allows high resistance values to be achieved within a compact area by increasing the effective path length through the serpentine geometry rather than simply extending the resistor in one direction.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12363996B2Semiconductor structure and method of manufacturing semiconductor structure

Publication Date: 2025.07.15 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure includes a semiconductor substrate, a serpentine-shaped resistor, and a MOS transistor. The semiconductor substrate includes an isolation structure and an active region. The serpentine-shaped resistor is over the isolation structure. The serpentine-shaped resistor extends in a length direction and has a width that is equal to or greater than about 3.6 μm in a width direction. The MOS transistor is over the active region of the semiconductor substrate.