SH Surface Acoustic Wave Device Spurious Response Suppression
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Solution Overview
Problem
Elastic wave devices with high-acoustic-velocity hard dielectric layers between a dielectric substrate and a piezoelectric film suffer from spurious responses due to the propagation of wave modes other than surface acoustic waves, leading to increased complexity and reduced performance.
Innovation Solution
The introduction of a high-acoustic-velocity film and a low-acoustic-velocity film stacked between a supporting substrate and a lithium niobate film, with specific Euler angles and materials like silicon oxide and aluminum nitride, to confine the SH surface acoustic wave and suppress spurious Rayleigh wave responses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a high-acoustic-velocity hard dielectric layer is disposed between a dielectric substrate and a piezoelectric film to increase acoustic velocity, then the frequency of the surface acoustic wave device is increased, but wave modes other than surface acoustic wave occur causing large spurious responses
Solution Approach 1:
The single hard dielectric layer is segmented into a three-layer structure consisting of a first dielectric layer (hard dielectric), a second dielectric layer (intermediate acoustic velocity), and a third dielectric layer (soft dielectric). This segmentation allows each layer to serve different functions: the first layer increases acoustic velocity, while the second and third layers suppress spurious responses by creating acoustic impedance gradients that confine the surface acoustic wave energy.
Solution Approach 2:
Different regions of the dielectric structure are assigned different acoustic velocities and impedances. The first dielectric layer has high acoustic velocity to boost frequency, while the second and third layers have progressively lower acoustic velocities to create a gradient that confines the acoustic energy locally at the piezoelectric film interface, preventing the generation of spurious wave modes.
2Speed
If a hard dielectric layer is disposed on the bottom of a piezoelectric film to obtain increased acoustic velocity, then the acoustic velocity is increased, but the elastic wave propagates concentrating in the piezoelectric film causing higher-order modes and plate waves
Solution Approach 1:
The dielectric structure is divided into three distinct layers with different acoustic velocity characteristics. This segmentation creates a controlled acoustic environment that guides the surface acoustic wave propagation, preventing energy concentration that would lead to higher-order modes and plate waves while maintaining the increased acoustic velocity benefit.
Solution Approach 2:
The second dielectric layer with intermediate acoustic velocity acts as an intermediary between the high-acoustic-velocity first layer and the low-acoustic-velocity third layer. This intermediate layer serves as a transition zone that smoothly gradients the acoustic impedance, preventing abrupt changes that would cause wave mode conversion and complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the electromechanical coupling coefficient of the SH surface acoustic wave while significantly reducing the spurious responses of higher-order wave modes, improving the device's frequency stability and resonance characteristics.
Implementation Method 1
an elastic wave device which uses an SH surface acoustic wave
Implementation Method 2
the acoustic velocity of a bulk wave which propagates in the high-acoustic-velocity film is higher than the acoustic velocity of the elastic wave which propagates on the lithium niobate film, and the acoustic velocity of a bulk wave which propagates in the low-acoustic-velocity film is lower than the acoustic velocity of a bulk wave which propagates in the lithium niobate film
Implementation Method 3
A lithium niobate film is stacked on the low-acoustic-velocity film... The electromechanical coupling coefficient k2 of the SH surface acoustic wave can be as high as about 20% or more
Data Source
AI summary
An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, θ, 0°), θ is in the range of about 0° to about 8° and about 57° to about 180°.


