Shallow Etching Chamber with Lift Ring for Plasma Temperature Control
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Solution Overview
Problem
Existing shallow etching process chambers face challenges in achieving high efficiency and productivity, particularly in performing low-temperature modification steps using plasma energy while maintaining high productivity.
Innovation Solution
The shallow etching process chamber design includes a susceptor with a lifting ring that moves up and down, allowing the wafer to adjust its position above an electrostatic chuck. This chamber also features internal and external shower heads, a baffle, and a ring heater to control temperature and plasma distribution effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a thermal process is used for both modification step and removal step, then the process can be performed in a single equipment, but much time is required for the process which limits productivity
Solution Approach 1:
The patent divides the etching process into two distinct steps performed in sequence: a modification step using plasma energy at low temperature, followed by a removal step using thermal energy at high temperature. This segmentation allows each step to be optimized independently, achieving both process integration and high productivity by eliminating the time penalty of thermal-only processes.
2Manufacturing precision
If high temperature is used for removal step, then the modified film can be removed effectively, but the modification step requires low temperature to maintain atomic layer precision
Solution Approach 1:
The patent employs dynamic temperature control by switching between low temperature (80°C or lower) for the modification step and high temperature (120°C or higher) for the removal step. This dynamic adjustment of temperature conditions enables precise atomic layer etching while maintaining high productivity through effective film removal at elevated temperatures.
3Productivity
If plasma energy is used for modification step, then high efficiency and high productivity can be achieved, but temperature control becomes critical to prevent damage to the wafer
Solution Approach 1:
The patent introduces a susceptor as an intermediary component between the plasma source and the wafer. The susceptor absorbs and dissipates excess plasma energy, preventing direct overheating of the wafer during the modification step. This intermediary mechanism enables high-efficiency plasma processing while maintaining precise temperature control at 80°C or lower.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables efficient and productive low-temperature modification steps using plasma energy, improving the overall performance of the shallow etching process by enhancing plasma uniformity and temperature control.
Implementation Method 1
a shower head heater is disposed at the internal shower head
Implementation Method 2
the chamber further comprises a ring heat disposed within the lift ring
Implementation Method 3
a modification step by a self-limited modification reaction at a low temperature of 80° C. or lower using plasma energy
Implementation Method 4
a wafer W can move up and down above an electrostatic chuck
Data Source
AI summary
A shallow process chamber comprises: a susceptor disposed within a chamber volume 11; a lifting ring 13 formed at the susceptor, and a moving means for moving the lift ring 13 up and down, wherein a wafer W moves up and down above an electrostatic chuck 12 by moving the lift ring 13 up and down.