Shallow Trench Isolation Layout for Leakage-Resistant Semiconductor Structures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices approach the 28-nm node and below, controlling the contour of shallow trench isolation structures becomes increasingly difficult, leading to potential damage from conventional cleaning processes, which can result in defects such as leakage and reduced reliability and yield.
Innovation Solution
A semiconductor structure with a base having an array region and a peripheral region, where the peripheral region features a first isolation structure with a larger top opening area than the array region, filled with a low dielectric constant top isolation layer that is flush with the base surface, and optionally includes additional interface layers to enhance dielectric properties and prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dry cleaning and wet cleaning are used to form buried wordline structure, then the cleaning process can remove contaminants, but the shallow trench isolation structure may be damaged, causing it to be lower than substrate and leading to leakage defects
Solution Approach 1:
The patent applies preliminary action by forming a protective layer on the shallow trench isolation structure before the cleaning process. This protective layer is deposited in advance to prevent damage during subsequent cleaning operations, thereby maintaining the contour integrity of the isolation structure while still allowing effective contamination removal.
Solution Approach 2:
The patent introduces an intermediary protective layer that mediates between the cleaning process and the shallow trench isolation structure. This intermediate layer allows the cleaning chemicals to remove contaminants without directly contacting and damaging the isolation structure, thus preserving its dimensional integrity while achieving thorough cleaning.
2Productivity
If the critical dimension is reduced to 28-nm node and below, then the semiconductor device can achieve higher integration, but it becomes increasingly difficult to control the contour of the shallow trench isolation structure
Solution Approach 1:
The patent applies parameter changes by modifying the physical and chemical parameters of the protective layer, such as its thickness, composition, and deposition conditions. By optimizing these parameters, the protective layer provides adequate protection while maintaining compatibility with the reduced critical dimensions, thus enabling high integration without sacrificing isolation structure precision.
Solution Approach 2:
The patent applies local quality by providing different protective layer configurations for different regions of the device. The protective layer is selectively formed or modified in areas where the shallow trench isolation structure is most vulnerable, allowing targeted protection that maintains overall manufacturing precision while supporting high integration density.
3Ease of manufacture
If the shallow trench isolation structure is damaged during cleaning, then contaminants can be removed effectively, but leakage defects occur at the edge of the isolation structure
Solution Approach 1:
The patent applies beforehand cushioning by forming a protective layer that cushions the shallow trench isolation structure against damage during cleaning. This protective layer absorbs the mechanical and chemical stress of the cleaning process, preventing edge damage and leakage defects while still allowing effective contaminant removal through the protective barrier.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents defects like leakage at the edge of the shallow trench isolation structure, improves the isolation effect, and enhances the dielectric properties of the shallow trench isolation structure, thereby increasing the reliability and yield of semiconductor devices.
Implementation Method 1
the top isolation layer being made of at least a low dielectric constant material
Data Source
AI summary
Embodiments of the present disclosure provide a semiconductor structure and a semiconductor structure manufacturing method. The semiconductor structure includes: a base including an array region and a peripheral region, the peripheral region having a first isolation structure, the array region having a second isolation structure, a top opening area of the first isolation structure being greater than that of the second isolation structure; the first isolation structure having a first groove, and a first insulation structure configured to fill the first groove; and the first insulation structure including at least a top isolation layer, a top surface of the top isolation layer being flush with a top surface of the base, and the top isolation layer being made of at least a low dielectric constant material.