Shared Contact Plug Structure for Compact Semiconductor Interconnects
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Solution Overview
Problem
Conventional semiconductor device connections require multiple lithography and etching steps, leading to large occupied space and difficulty in shrinking size, while also risking damage to spacer and semiconductor layers during the formation of electrical connections.
Innovation Solution
An integrated structure with a shared contact plug is introduced, featuring a first device with a conduction region, spacer regions, and a protection region, and a second device with a shared region, where the shared contact plug electrically connects the first gate to the shared region, overlaying and connecting with the protection region, and is formed using a reduced number of process steps to prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional electrical connection structures are used to connect adjacent semiconductor devices, then reliable electrical connection is achieved, but the occupied space increases and device size cannot be shrunk
Solution Approach 1:
The patent merges the contact plug formation process into a single shared etching step that simultaneously creates contact openings for multiple adjacent devices. The shared contact plug structure allows electrical connection between devices while reducing the overall occupied space by eliminating redundant connection structures.
Solution Approach 2:
The shared contact plug serves multiple functions: it provides electrical connection for multiple adjacent semiconductor devices simultaneously, acts as a common reference structure for alignment, and enables compact device布局. This multi-functional approach reduces the number of separate connection structures needed.
2Productivity
If multiple lithography and etching process steps are used to form electrical connection structures, then precise electrical connection is achieved, but the manufacturing complexity increases and production efficiency decreases
Solution Approach 1:
The patent combines multiple lithography and etching steps into a single integrated process. One lithography step defines the pattern for shared contact plugs, and one etching step simultaneously creates all contact openings, reducing manufacturing complexity and improving production efficiency.
Solution Approach 2:
The shared contact plug structure is designed and formed in advance before individual device fabrication. This preliminary action establishes a common reference framework that simplifies subsequent device manufacturing steps and reduces overall process complexity.
3Area of stationary object
If the distance between gate and source is increased to accommodate electrical connection structures, then reliable electrical connection is achieved, but the device area increases
Solution Approach 1:
The patent transitions from planar electrical connection to a three-dimensional shared contact plug structure. The contact plugs extend vertically through the substrate, allowing electrical connection without increasing the horizontal distance between gate and source, thus maintaining compact device area.
Solution Approach 2:
The shared contact plug structure is nested within the common substrate region, allowing multiple devices to share the same vertical connection pathway. This nesting approach enables reliable electrical connection while minimizing the horizontal space required for each device.
4Reliability
If conventional contact plug formation processes are used, then electrical connection is achieved, but spacer and semiconductor layers are damaged
Solution Approach 1:
The shared contact plug acts as an intermediary structure that provides a common etching reference and protection framework. The uniform etching process targeted at the shared contact plug structure minimizes collateral damage to adjacent spacer and semiconductor layers compared to individual contact plug formation.
Solution Approach 2:
The patent optimizes etching parameters specifically for the shared contact plug formation, using controlled etching depth and rate that precisely removes material where needed while preserving adjacent sensitive structures. The shared structure allows for better parameter control and monitoring.
Data Source
AI summary
An integrated structure of semiconductor devices having a shared contact plug includes: a first device, a second device and a shared contact plug. The first device includes a first gate having a conduction region, two spacer regions and a protection region. The two spacer regions overlay and are connected with two ends of the conductive region, respectively. The protection region overlays and is connected with the spacer region located outside a shared side of the conductive region. The second device includes a shared region, wherein the shared region is located in a semiconductor layer which is located below and outside the protection region. The shared contact plug is formed on and in contact with the conductive region and the shared region. The first gate is electrically connected with the shared region through the shared contact plug, wherein the shared contact plug overlays and is connected with the protection region.