eFuse OTP Memory Cell With Shared Transistors for Smaller Arrays

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Solution Overview

Problem

Existing eFuse OTP memories face challenges in reducing the area of the cell array due to the use of multiple transistors, which hinders the design of smaller memory devices and affects product competitiveness.

Innovation Solution

The eFuse OTP memory design minimizes the number of transistors by incorporating a specific configuration of PMOS and NMOS transistors, a program transistor, and a fuse, with controlled signal applications for programming and reading operations, reducing the overall cell area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple transistors are implemented to perform multiple functions in an eFuse unit cell, then the functionality and reliability of the eFuse cell is improved, but the area of the eFuse OTP memory device is enlarged

Engineering Contradiction:
Improvefunctionality of eFuse cellVSAvoidarea of eFuse OTP memory device
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent implements a transistor sharing mechanism where transistors serve multiple functions across different eFuse cells. Specifically, transistors are shared between adjacent eFuse cells to perform both programming and reading operations, thereby reducing the total number of transistors required while maintaining full functionality. This multi-functionality approach directly resolves the contradiction by preserving reliability through functional completeness while reducing area through resource sharing.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the transistor requirements of adjacent eFuse cells by implementing a shared transistor architecture. Instead of each eFuse cell having dedicated transistors for all operations, the design combines and shares transistor resources between cells, particularly for programming operations. This merging strategy reduces the overall transistor count and consequently the memory device area while maintaining the necessary functionality through coordinated operation of shared transistors.

Inventive Principle:
Principle #5Merging (Combining)

2Ease of operation

If a conventional eFuse cell configuration with multiple transistors is used, then the programming and reading operations can be performed, but the cell array area becomes enlarged making it difficult to design small memory devices

Engineering Contradiction:
Improveprogramming and reading operationsVSAvoidcell array area
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent employs a universal transistor sharing approach where transistors are designed to perform multiple operations (programming and reading) across different eFuse cells. This multi-functionality allows the same transistor to be utilized for different purposes depending on the operational mode and cell selection, thereby maintaining ease of operation while significantly reducing the cell array area compared to dedicated transistor configurations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent implements dynamic control of shared transistors through timing sequences and control signals that enable transistors to switch between different operational states. The transistor sharing is dynamically managed based on whether programming or reading operations are currently active, allowing flexible and efficient use of shared resources. This dynamic approach ensures that operations can be performed correctly while minimizing the physical space required for the cell array.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for a smaller eFuse OTP memory cell area, enhancing design flexibility and competitiveness by minimizing transistor usage.

Implementation Method 1

An eFuse OTP memory may make an overcurrent flow to a metal fuse or a poly-silicon fuse approximately 10 mA-30 mA, may program a fuse by blowing it

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS12424284B2Electrical fuse one time programmable (OTP) memory
Publication Date: 2025.09.23 SK KEYFOUNDRY INC
  • US12424284B2 patent drawing
  • US12424284B2 patent drawing
  • US12424284B2 patent drawing

AI summary

An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.