Shared Capacitor-Transistor Electrodes for Compact Semiconductor Layouts
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving miniaturization, integration, stability, reliability, and reduced power consumption while maintaining high productivity and design flexibility, with variations in electrical characteristics and data retention being key issues.
Innovation Solution
A semiconductor device design incorporating shared electrodes between capacitors and transistors, utilizing conductive layers and oxide structures to enhance electrical connectivity and reduce manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If separate electrodes are used for capacitors and transistors, then electrical connectivity is achieved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent combines the capacitor electrode and transistor electrode into a single shared electrode structure. The conductive layer serves dual purposes: as the bottom electrode for the capacitor and as the source/drain electrode for the transistor, eliminating the need for separate electrodes and reducing overall device complexity while maintaining proper electrical connectivity for both components.
Solution Approach 2:
The shared conductive electrode performs multiple functions simultaneously: it acts as the bottom electrode for the capacitor to store charge, and as the source or drain electrode for the transistor to conduct current. This multi-functional design reduces the number of required components and simplifies the overall device architecture.
2Reliability
If more manufacturing steps are used to ensure stability and reliability, then electrical characteristics improve, but productivity decreases
Solution Approach 1:
The patent merges the fabrication processes for capacitor and transistor electrodes into a single simultaneous formation step. By patternning the shared conductive layer to serve both components, the manufacturing process requires fewer discrete steps compared to forming separate electrodes, thereby improving productivity while ensuring stable electrical characteristics through consistent material deposition.
3Area of moving object
If device size is reduced for miniaturization, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent reduces device area by merging the capacitor and transistor electrodes into a shared conductive structure. This integration eliminates the need for separate electrode regions and reduces the overall footprint. The shared electrode design inherently simplifies alignment requirements since a single conductive layer serves both components, reducing manufacturing precision demands compared to aligning multiple separate electrodes in miniaturized devices.
Data Source
AI summary
A semiconductor device that can be miniaturized or highly integrated is provided.The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.