Stacked Transistor-Capacitor Structure for Compact Memory Cell Layout
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Solution Overview
Problem
Conventional semiconductor devices with integrated circuits have a large layout area, which limits the density of memory cells and increases the size of Non-Volatile Memories, making them less efficient in terms of integration and operation mechanisms.
Innovation Solution
A semiconductor device design that integrates a transistor and a capacitor with a shared semiconductor layer, reducing the active region for the capacitor contact and optimizing the layout to minimize area usage, allowing for a higher density of memory cells while maintaining compatible program and erase operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional semiconductor device structures are used, then the device can be manufactured with standard processes, but the layout area becomes large, limiting memory cell density
Solution Approach 1:
The patent merges the capacitor electrode formation process with the transistor gate formation process by using the same semiconductor layer for both structures. The semiconductor layer is patterned to form the transistor gate in one region and the capacitor electrode in another region, eliminating the need for separate capacitor electrode structures and reducing overall layout area.
Solution Approach 2:
The semiconductor layer serves multiple functions simultaneously: it acts as the gate electrode for the transistor and as the electrode for the capacitor. This multi-functionality reduces the number of separate components needed, thereby minimizing the layout area while maintaining both transistor and capacitor functionality.
2Area of stationary object
If the active region for capacitor contact is reduced, then the layout area decreases, but the operational mechanisms must be maintained
Solution Approach 1:
The semiconductor layer is selectively patterned to have different local properties: in the transistor region, it forms a gate electrode with specific dimensions and positioning, while in the capacitor region, it forms an electrode with different dimensional characteristics. This local differentiation allows optimized area usage while maintaining proper operational mechanisms for both devices.
Solution Approach 2:
The patent utilizes vertical stacking to accommodate both transistor and capacitor structures within the same planar footprint. By forming the semiconductor layer at a higher elevation than the substrate surface and using vertical interconnections, the design achieves three-dimensional integration that reduces the two-dimensional layout area while preserving operational functionality.
Data Source
AI summary
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a transistor, and a capacitor. The transistor includes a gate electrode disposed on the substrate. The capacitor is electrically connected to the transistor and includes a capacitor dielectric and a capacitor electrode. The capacitor dielectric and the capacitor electrode are stacked over the gate electrode of the transistor.