Shared-Gate Pixel Structure for High-Aperture OLED Displays
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Solution Overview
Problem
Existing organic light emitting display devices face challenges in achieving a high aperture ratio within a limited space, particularly in ultra-high resolution displays, which increases the likelihood of pixel defects and complicates repair processes.
Innovation Solution
The design incorporates a pixel structure with a protrusion electrode from the gate line acting as a gate electrode for both switching thin film transistors, allowing for improved aperture ratio and simplified repair mechanisms by sharing the gate electrode and simultaneously cutting the data and sensing lines during repair.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the pixel size is reduced to achieve ultra-high resolution, then the resolution is improved, but the aperture ratio decreases and the likelihood of pixel defects increases
Solution Approach 1:
The patent merges the gate electrodes of the first and second switching thin film transistors into a single shared gate electrode formed by a protrusion electrode. This consolidation reduces the total gate electrode area, thereby increasing the aperture ratio while maintaining ultra-high resolution capability.
Solution Approach 2:
The protrusion electrode serves multiple functions: it acts as the gate electrode for both the first switching thin film transistor and the second switching thin film transistor simultaneously. This multi-functionality reduces the number of separate gate electrodes needed, increasing the aperture ratio without compromising transistor operation.
2Measurement precision
If the pixel size is reduced to achieve ultra-high resolution, then the resolution is improved, but the likelihood of pixel defects increases
Solution Approach 1:
The patent enables easy discarding of defective pixels through repair holes that allow laser cutting of the protrusion electrode. When a pixel defect occurs, the protrusion electrode can be selectively cut to isolate the defective pixel, and the defect can be recovered by reconnecting through the repair hole, thereby maintaining high reliability in ultra-high resolution displays.
3Adaptability or versatility
If more transistors are added to improve pixel functionality, then the switching capability is improved, but the device complexity increases
Solution Approach 1:
The patent combines the gate electrodes of two switching thin film transistors into a single shared protrusion electrode structure. This merging maintains the switching capability of both transistors while reducing the overall device complexity by eliminating redundant gate electrode structures.
Solution Approach 2:
The shared protrusion electrode serves as the gate electrode for both switching thin film transistors, providing multi-functionality. This universal gate structure enables both transistors to operate independently with full switching capability while reducing the total number of gate electrodes and simplifying the device structure.
4Illumination intensity
If the aperture ratio is increased to improve luminance, then the luminance is improved, but the space for pixel circuit components is reduced
Solution Approach 1:
By merging the gate electrodes of the first and second switching thin film transistors into a single shared protrusion electrode, the patent reduces the total area occupied by gate electrodes. This area reduction increases the aperture ratio and allows more space for pixel circuit components, thereby improving luminance without compromising circuit functionality.
Data Source
AI summary
A pixel is discussed, which is disposed in a pixel area defined by a gate line, a data line and a pixel power line, and includes a light emission portion and a pixel circuit, wherein the pixel circuit can include a protrusion electrode protruded from the gate line along a length direction of the data line, and first and second thin film transistors disposed in parallel between the light emission portion and the gate line, using the protrusion electrode as a gate electrode.