Mixed-Gate TFT Display Structure Using Shared Gate and Wire Layers
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Solution Overview
Problem
Existing display technologies require additional processes to generate different element characteristics for thin film transistors, leading to increased costs and reduced cost competitiveness.
Innovation Solution
A display device with both bottom gate and top gate thin film transistors on the same substrate, where the top gate electrode is integrated in the same layer as the wire layer, allowing for separate generation of element characteristics without adding processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional processes are added to generate different element characteristics for thin film transistors, then the element characteristics can be separately generated, but the manufacturing cost increases
Solution Approach 1:
The patent combines the wire layer and top gate electrode layer into a single layer structure. The top gate electrode is formed simultaneously with the wire patterns in the same manufacturing step, eliminating the need for separate ion implantation processes. This merging of functions into one layer achieves both wiring and gate control while reducing process complexity and cost.
Solution Approach 2:
The top gate electrode layer serves dual purposes: it functions as both the gate electrode for top gate TFTs and as part of the wire layer for electrical connections. This multi-functional design allows the same layer to provide both control and signaling functions, eliminating the need for additional dedicated gate electrode processes.
2Manufacturing precision
If additional processes are added to generate different element characteristics for thin film transistors, then the element characteristics can be separately generated, but the device complexity increases
Solution Approach 1:
The patent merges the formation of the top gate electrode with the wire layer creation into a single manufacturing step. By using the same layer for both purposes, the number of discrete process steps is reduced, simplifying the overall manufacturing sequence while still achieving distinct element characteristics through selective patterning and material properties.
Solution Approach 2:
Within the unified layer structure, the patent segments different regions to serve different functions. The top gate electrode is patterned in specific areas to control top gate TFTs, while other portions form wire connections. This segmentation within a unified layer allows functional differentiation without requiring separate process steps for each component.
Data Source
AI summary
A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. Agate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.