Shared-Ground Plasma Buffer Layout for Uniform Low-Temperature Films
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Solution Overview
Problem
As semiconductor device manufacturing progresses towards lower temperature substrate processing, existing technologies face challenges in uniformly processing films due to increased high-frequency power requirements, which can lead to non-uniform film deposition and particle generation.
Innovation Solution
A substrate processing apparatus with an odd number of electrodes, where one electrode is grounded and shared by adjacent high-frequency power-supplied electrodes, is used to generate plasma in a buffer chamber, optimizing gas supply and plasma generation regions for improved uniformity and reduced particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-frequency power is increased to enable low-temperature substrate processing, then processing temperature is reduced, but film uniformity deteriorates
Solution Approach 1:
The plasma generation system is segmented into multiple independent plasma generation regions, each with its own electrode pair. This allows distributed plasma generation across the substrate surface, preventing localized overheating and improving film uniformity even at lower temperatures where plasma generation is less efficient
Solution Approach 2:
Multiple plasma generation regions are merged to collectively provide sufficient active species for low-temperature processing. By combining the plasma generation capability of several electrode pairs, the system achieves the necessary plasma density without requiring excessive power in any single region, thereby maintaining film uniformity
2Temperature
If high-frequency power is increased to enable low-temperature substrate processing, then processing temperature is reduced, but particle generation increases
Solution Approach 1:
Segmenting plasma generation into multiple distributed regions reduces localized plasma density extremes that can cause particle generation. Each electrode pair operates at moderate power levels, avoiding the high-power hotspots that generate particles while still providing sufficient total plasma for low-temperature processing
Solution Approach 2:
The patent converts the challenge of low plasma generation efficiency at low temperatures into a benefit by using multiple electrode pairs. The distributed configuration ensures that no single region requires excessive power, thereby eliminating particle generation while maintaining the low-temperature advantage
3Quantity of substance
If multiple electrodes are added to increase plasma generation area, then active species supply is improved, but device complexity increases
Solution Approach 1:
The grounded electrode serves multiple functions: it acts as the counter-electrode for adjacent high-frequency electrodes, provides a reference potential, and helps define plasma generation regions. This multi-functionality reduces the need for additional dedicated components, offsetting the complexity increase from adding more electrodes
Solution Approach 2:
Adjacent plasma generation regions share common grounded electrodes, merging their structural requirements. This shared electrode configuration reduces the total number of discrete components compared to having completely independent electrode pairs for each plasma region, thereby limiting the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of film thickness and improves throughput by increasing the electrode area and active species supply, while reducing particle generation and installation space, allowing for efficient low-temperature film formation.
Implementation Method 1
a precursor gas and a reaction gas supplied into the process chamber are activated using plasma
Implementation Method 2
at least one first electrode connected to a high-frequency power supply; and at least one second electrode to be grounded
Data Source
AI summary
There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.