Shared Sense Amplification Layout for Higher Memory Capacity

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Solution Overview

Problem

The area occupied by sense amplification units in semiconductor devices limits the expansion of memory cell capacity or reduction of device area in existing semiconductor memory devices.

Innovation Solution

Implementing a semiconductor device design where at least two memory cell groups share a same sense amplification unit group, allowing for the omission of sense amplification units between adjacent memory cell groups and enabling the sharing of sense amplification units across multiple memory cell groups.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If sense amplification units are distributed on both sides of each memory cell, then sensing function is ensured, but the occupied area of memory cells cannot be enlarged and storage capacity cannot be increased

Engineering Contradiction:
Improvesensing functionVSAvoidstorage capacity
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

Multiple memory cell groups share a common sense amplification unit group, merging the sensing function across multiple memory groups. This consolidation reduces the total number of sense amplification units needed, thereby freeing up area that can be reallocated to increase memory cell capacity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The sense amplification unit group serves multiple memory cell groups simultaneously, making it a multi-functional component. This universal sense amplification structure eliminates the need for dedicated sense amplifiers for each memory group, optimizing area utilization and enabling increased storage capacity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If sense amplification units are distributed on both sides of each memory cell, then sensing function is ensured, but the area of semiconductor device cannot be reduced when storage capacity remains unchanged

Engineering Contradiction:
Improvesensing functionVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

By merging the sense amplification units into shared groups that serve multiple memory cell groups, the total area occupied by sense amplification circuitry is reduced. This area reduction directly contributes to shrinking the overall device footprint while maintaining full sensing functionality.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If the area of sense amplification unit cannot be further reduced, then sensing performance is maintained, but the occupied area of memory cells cannot be enlarged

Engineering Contradiction:
Improvesensing performanceVSAvoidmemory cell area
Core Design Contradiction:
ReliabilityVSArea of moving object

Solution Approach 1:

The patent merges sense amplification units into shared groups that are commonly used by multiple memory cell groups. This consolidation maintains adequate sensing performance through proper design of the shared amplifiers while significantly reducing the total area dedicated to sense amplification, thereby allowing memory cell area to be enlarged.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12376291B2Semiconductor device including shared sense amplification circuit group
Publication Date: 2025.07.29 CHANGXIN MEMORY TECH INC
  • US12376291B2 patent drawing
  • US12376291B2 patent drawing
  • US12376291B2 patent drawing

AI summary

A semiconductor device is provided. The semiconductor device includes a plurality of memory cell groups and a plurality of sense amplification unit groups, and at least two memory cell groups share a same sense amplification unit group.