Shared-Top-Electrode Resistive Memory Arrays for Simpler Fabrication

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Solution Overview

Problem

There is a need for improved structures and methods for forming resistive memory elements in semiconductor devices that include efficient sharing of electrodes to enhance data storage and retrieval capabilities while minimizing fabrication complexity and risks.

Innovation Solution

The structure comprises multiple resistive memory elements with shared top electrodes and separate bottom electrodes, along with a switching layer, integrated within a field-effect transistor-based architecture that allows for adaptive body biasing and reduced leakage, enabling scalable and reliable data storage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If each resistive memory element has its own dedicated top electrode, then manufacturing precision can be maintained, but device complexity and fabrication difficulty increase

Engineering Contradiction:

Improvealignment precisionVSAvoidfabrication complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Multiple resistive memory elements share a common top electrode structure. Specifically, a first plurality of resistive memory elements share a first top electrode, and a second plurality of resistive memory elements share a second top electrode. This merging approach reduces the total number of electrodes required, simplifying the fabrication process and reducing misalignment risks while maintaining manufacturing precision through the shared structure design.

Inventive Principle:

Principle #5Merging (Combining)

2Manufacturing precision

If more top electrodes are used for each resistive memory element, then manufacturing precision can be maintained, but the number of fabrication steps increases

Engineering Contradiction:

Improvealignment precisionVSAvoidfabrication efficiency

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent combines multiple electrode functions into shared top electrode structures. The first top electrode serves multiple resistive memory elements in a first plurality, and the second top electrode serves multiple resistive memory elements in a second plurality. This reduces the total electrode count and fabrication steps while maintaining alignment precision through the shared structure.

Inventive Principle:

Principle #5Merging (Combining)

3Device complexity

If shared top electrodes are used for multiple resistive memory elements, then device complexity is reduced, but misalignment risks increase

Engineering Contradiction:

Improvefabrication complexityVSAvoidalignment precision

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

Multiple resistive memory elements share common top electrode structures, reducing device complexity and the number of fabrication steps. The shared first top electrode serves a first plurality of resistive memory elements, and the shared second top electrode serves a second plurality, maintaining alignment precision through the unified structure design.

Inventive Principle:

Principle #5Merging (Combining)

4Manufacturing precision

If individual top electrodes are used for each resistive memory element, then alignment precision can be maintained, but the number of fabrication steps and cost increase

Engineering Contradiction:

Improvealignment precisionVSAvoidfabrication cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges top electrode functions by having multiple resistive memory elements share common top electrodes. The first top electrode is shared by a first plurality of resistive memory elements, and the second top electrode is shared by a second plurality, reducing fabrication cost and complexity while maintaining alignment precision through the shared structure design.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances data storage efficiency, reduces leakage, and minimizes fabrication risks by allowing adaptive body biasing and efficient data retrieval, while being scalable and cost-effective.

Implementation Method 1

The conductive filaments may be formed, for example, by the diffusion of a conductive species (e.g., metal ions) from one or both of the electrodes into the switching layer

Methodology Applied

Scientific EffectDiffusion: Diffusion

Data Source

PatentUS20240023345A1Resistive memory element arrays with shared electrode strips

Publication Date: 2024.01.18 GLOBALFOUNDRIES US INC

AI summary

Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a first plurality of resistive memory elements including a first plurality of bottom electrodes, a first top electrode, and a first switching layer between the first top electrode and the first plurality of bottom electrodes. The structure further comprises a second plurality of resistive memory elements including a second plurality of bottom electrodes, a second top electrode, and a second switching layer between the second top electrode and the second plurality of bottom electrodes. The first top electrode is shared by the first plurality of resistive memory elements, and the second top electrode is shared by the second plurality of resistive memory elements.