SHE-Assisted MTJ Memory Cell for Fast, Endurable Writing

The patent introduces a Spin-Hall-Effect-assisted layer as an intermediary component that generates spin current to assist in switching the magnetic tunnel junction. This mediator enables faster and more reliable writing by decoupling the write current path from the MTJ, preventing direct current stress on the tunneling barrier while still achieving effective magnetic switching through spin transfer torque from the spin Hall effect.

The patent merges the benefits of SOT-MRAM (fast writing, no breakdown) with a simplified structure that uses the same bit line for both reading and writing operations. The Spin-Hall-Effect-assisted layer enables the write operation to be performed through the bit line without requiring separate write word lines or decoupled paths, thus reducing device complexity while maintaining high write speed performance.

The Spin-Hall-Effect-assisted layer acts as a protective intermediary that enables magnetic switching without requiring high current density through the dielectric tunneling barrier. By generating spin current in the Spin-Hall-Effect-assisted layer that diffuses into the MTJ, the system achieves effective writing while keeping the write current path separate from the MTJ, thus preventing breakdown of the dielectric barrier and improving write endurance.