Shield Gate Electrode Connection via Trench Etching
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Solution Overview
Problem
The conventional method of manufacturing semiconductor devices requires a cumbersome insulation film removing step to establish the connection between the shield electrode and the source electrode, leading to potential slippage during high and low temperature cycles, which compromises the stability of the electrode connection.
Innovation Solution
The method involves forming a semiconductor device with a shield gate structure where the gate electrode and shield electrode are separated, allowing the source electrode to be directly connected to the shield electrode after forming the second gap by etching back the shield electrode, eliminating the need for an insulation film removing step and enhancing the anchor effect between the electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the shield electrode is formed before the source electrode with insulation films present, then the gate structure can be completed, but an additional insulation film removing step is required which increases manufacturing complexity
Solution Approach 1:
The patent applies preliminary action by forming the second gap (exposed surface) of the shield electrode before forming the source electrode. This ensures that when the source electrode is subsequently formed, it can be directly connected to the shield electrode without requiring removal of insulation films, thereby simplifying the manufacturing process and reducing the number of steps
Solution Approach 2:
The patent extracts the insulation film from the connection region between the shield electrode and source electrode. By removing the insulation film in the second gap region before source electrode formation, the patent enables direct electrical connection without requiring additional insulation removal steps later in the process
2Reliability
If insulation films are present between shield electrode and source electrode, then electrical isolation is maintained, but electrode connection stability deteriorates during temperature cycles
Solution Approach 1:
The patent removes the insulation film in the second gap region to enable direct contact and electrical connection between the shield electrode and source electrode. This extraction of the insulating layer eliminates the interface that would cause slippage during temperature cycles, thereby improving connection reliability
Solution Approach 2:
The patent merges the shield electrode and source electrode into direct contact by eliminating the insulation film barrier. This combining of previously separated components creates a unified electrical connection that is more stable during temperature variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration simplifies the connection process, minimizes slippage of the source electrode, and enhances the stability of the electrode connection during high and low temperature cycles by ensuring a secure electrical connection through the anchor effect.
Implementation Method 1
the gate insulation film and the protective insulation film are formed above the shield electrode 924 by a step which comes before the source electrode forming step
Implementation Method 2
In the protective oxide film removing step, with the use of a CMP method, along with the removal of a protective insulation film 934′ on a surface of the shield electrode 924
Data Source
AI summary
A method of manufacturing a semiconductor device includes in the following order: a semiconductor base body preparing step; a first trench forming step; a first insulation film forming step; a gate insulation film forming step; a gate electrode forming step; a second trench forming step of forming a second trench in the inside of a first trench by removing a center portion of the first insulation film; a second insulation film forming step of forming a second insulation film in the inside of the second trench under a condition that a first gap remain in the inside of the second trench; a shield electrode forming step of forming a shield electrode in the inside of the first gap; a shield electrode etching back step of forming a second gap; and a source electrode forming step of forming a source electrode.