Conductive Shield Layer Adhesion in Semiconductor Devices
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Solution Overview
Problem
The reliability of semiconductor devices is compromised due to low adhesion between the conductive shield layer and the sealing resin layer, leading to potential peeling off of the copper shield layer, which affects the EMI shielding effectiveness.
Innovation Solution
A semiconductor device design that includes a metal compound layer containing metal nitride between the conductive shield layer and the sealing resin layer, enhancing adhesion and electrical connectivity to the ground wiring for effective EMI shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If copper is used as the conductive shield layer, then EMI shielding effectiveness is improved, but adhesion to sealing resin layer deteriorates leading to peeling
Solution Approach 1:
The metal compound layer containing metal nitride acts as an intermediary that bonds the copper EMI shield layer to the sealing resin layer. This intermediate layer maintains the EMI shielding effectiveness of copper while providing the necessary adhesion strength to prevent peeling under environmental stress.
Solution Approach 2:
The patent employs a composite layered structure where the metal compound layer (containing metal nitride) combines the electrical shielding properties of copper with the adhesion properties of metal nitride, creating a composite material system that simultaneously achieves EMI shielding effectiveness and strong bonding to the sealing resin.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal compound layer improves the adhesion between the sealing resin layer and the conductive shield layer, maintaining the shielding effectiveness and reducing the risk of peeling, even under various environmental tests.
Implementation Method 1
a metal compound layer containing a metal nitride in contact with a surface of the sealing resin layer
Data Source
AI summary
A semiconductor device includes a wiring substrate that includes a base having a first surface, a second surface, and a wiring, a semiconductor chip located on the first surface, an external connection terminal located on the second surface and electrically connected to the wiring, a sealing resin layer covering the semiconductor chip, a metal compound layer containing a metal nitride in contact with a surface of the sealing resin layer, and a conductive shield layer covering the sealing resin layer with the metal compound layer interposed between the conductive shield layer and the sealing resin layer. The wiring is exposed at a side surface of the wiring substrate, and is electrically connected to the conductive shield layer.