Shield Line for Semiconductor Leakage Current Detection

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Solution Overview

Problem

Semiconductor manufacturing faces challenges in product yield and reliability, particularly in high voltage applications, where defects in metal line isolation can lead to failures during operation, and existing testing methods fail to identify these defects effectively.

Innovation Solution

The introduction of a shield line between metal lines carrying different voltages, which is not part of any functional circuit, allows for the application of a stress voltage to detect leakage currents indicative of potential failures, thereby identifying susceptible regions without affecting the operational circuitry.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If existing testing methods are used, then manufacturing process is simple, but defects in metal line isolation cannot be detected effectively

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidtesting structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

A shield line is introduced as an intermediary element between adjacent metal lines carrying different voltages. This shield line serves as a mediator to detect leakage currents that indicate isolation defects, enabling precise defect detection without directly modifying the functional metal lines while maintaining structural simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If shield line is added between metal lines, then leakage current detection is improved, but device area increases

Engineering Contradiction:
Improveisolation defect detectionVSAvoidchip area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The shield line is strategically placed only in critical regions where metal lines carrying different voltages are adjacent and isolation defects are most likely to occur. This localized approach provides targeted defect detection capability while minimizing the additional area consumed, rather than adding shield lines throughout the entire device.

Inventive Principle:
Principle #3Local quality

3Measurement precision

If stress voltage is applied to detect leakage currents, then defect identification is improved, but risk of damaging functional circuitry increases

Engineering Contradiction:
Improveleakage current detection accuracyVSAvoidcircuit damage risk
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The shield line acts as a protective intermediary that allows stress voltage to be applied safely. By measuring leakage currents through the shield line rather than through functional metal lines, the testing method achieves high detection accuracy while isolating the functional circuitry from damaging stress conditions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the detection of small leakage currents, significantly improving the identification of weak regions in metal lines, reducing the risk of failures and enhancing the reliability of semiconductor devices without increasing area consumption or test time.

Implementation Method 1

measuring a current through the shield line in response to the stress voltage

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS10698022B2Testing of semiconductor devices and devices, and designs thereof
Publication Date: 2020.06.30 INFINEON TECHNOLOGIES AG
  • US10698022B2 patent drawing
  • US10698022B2 patent drawing
  • US10698022B2 patent drawing

AI summary

In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. A fixed voltage is applied to a first metal line disposed above the substrate adjacent the shield line. The first metal line is coupled to the functional circuitry and is configured to be coupled to a high voltage node during operation. The peak voltage is greater than a maximum fixed voltage. The shield line separates the first metal line from an adjacent second metal line configured to be coupled to a low voltage node during operation. The method further includes measuring a current through the shield line in response to the stress voltage, determining the current through the shield line of the semiconductor device, and based on the determination, identifying the semiconductor device as passing the test.