Semiconductor Shield Pillar Air Gap Parasitic Capacitance
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Solution Overview
Problem
Highly integrated semiconductor devices face significant performance limitations due to parasitic capacitance between neighboring conductive structures, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device design incorporating a shield pillar made of boron-doped polysilicon, air gaps, and specific device isolation regions to reduce parasitic capacitance and suppress the passing gate effect, featuring a buried bit line and gate electrode configuration with carefully structured trenches and dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If device isolation regions are used to separate active regions, then parasitic capacitance between neighboring conductive structures is reduced, but device complexity increases due to the need for shield pillars and air gaps
Solution Approach 1:
The device isolation region is segmented into multiple functional components: a first device isolation region with a shield pillar for electrical isolation, and a second device isolation region with an air gap for physical separation. This segmentation allows each component to address specific aspects of parasitic capacitance reduction while maintaining manageable complexity through modular design.
Solution Approach 2:
The shield pillar acts as an intermediary conductive structure between active regions, providing electrical isolation by creating a controlled potential barrier. The air gap serves as a physical intermediary that eliminates direct electrical contact between neighboring structures, thereby reducing parasitic capacitance without requiring complex insulation layers.
2Reliability
If shield pillars are added to device isolation regions, then passing gate effect is suppressed, but manufacturing precision requirements increase
Solution Approach 1:
The shield pillar is formed as part of the device isolation region structure before the active regions are fully defined. This preliminary formation allows the shield pillar to be positioned relative to the isolation trenches rather than requiring precise positioning relative to subsequently formed active regions, thereby reducing manufacturing precision requirements while still achieving passing gate effect suppression.
Solution Approach 2:
The shield pillar structure is replicated at regular intervals between neighboring active regions, using the same formation process and dimensions. This copying approach ensures consistent electrical isolation characteristics without requiring individual precision positioning of each shield pillar, as the periodic structure naturally maintains proper spacing and alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic capacitance and suppresses the passing gate effect, enhancing the performance and efficiency of semiconductor devices by improving isolation and reducing electrical interference between adjacent structures.
Implementation Method 1
parasitic capacitance between neighboring conductive structures
Implementation Method 2
The shield pillar may include polysilicon doped with boron
Data Source
AI summary
A semiconductor device may include: a semiconductor substrate comprising a plurality of active regions and a device isolation region for isolating the plurality of active regions; and a conductive shield pillar formed in the device isolation region and connected to the semiconductor substrate. Each of the active regions may include: a body portion formed in the substrate; a pillar floating from the body portion and positioned over the body portion; a side portion provided over a side surface of the pillar and connected to the body portion; and an embedded spacer positioned between the side portion and the pillar, the pillar may be coupled to the substrate through the side portion.