Shield Plate Dopant Region Transistor Design
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Solution Overview
Problem
Conventional transistor designs face a trade-off between breakdown voltage (BVdss) and on-state resistance (Rdson), where increasing BVdss to enhance high power applications results in undesirably higher Rdson, compromising transistor effectiveness.
Innovation Solution
Incorporating a shield plate dopant region within the drift dopant region of transistors, which increases BVdss without increasing capacitance, and introduces a higher doping concentration to reduce Rdson, thereby optimizing both parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If drift length is increased to increase breakdown voltage (BVdss), then BVdss is improved, but on-state resistance (Rdson) increases undesirably
Solution Approach 1:
The patent applies local quality by creating a shield plate dopant region with higher doping concentration specifically beneath the shield plate structure. This localized doping enhancement modifies the electric field distribution in the drift region, allowing the drift length to be extended for higher breakdown voltage while the concentrated dopant region maintains lower on-state resistance by providing additional charge carriers where needed.
Solution Approach 2:
The patent changes the doping concentration parameter by introducing a shield plate dopant region with higher doping concentration compared to the surrounding drift dopant region. This parameter change allows the device to achieve both high breakdown voltage (through increased drift length) and low on-state resistance (through localized higher doping concentration beneath the shield plate).
Data Source
AI summary
Forming a transistor transistor includes forming a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, a set of electrically conductive shield plates, and a shield plate dopant region. A sidewall of the gate aligns with a drain side boundary of the surface region. The drain dopant region is formed within the surface region on the drain side. The drift dopant region is formed within the surface region between the drain side boundary and the drain dopant region. The set of electrically conductive shield plates includes a first shield plate overlying the drift dopant region. The shield plate dopant region is formed within the drift dopant region and underlies the set of shield plates.