Shield Structure for 3D IC Inductor Noise Isolation
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Solution Overview
Problem
In three-dimensional integrated circuits (3DICs), the stacking of inductors with the same photoreticle or photomask layout leads to magnetic and electric field disturbances, causing noise and performance degradation due to mutual interference between inductors on different IC chips.
Innovation Solution
A shield structure, comprising a backside shield wire or doped shield region, is placed directly between the inductors to block magnetic and electric fields, using materials with high magnetic permeability or high doping concentrations to cancel out these fields and prevent interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If inductors are stacked with the same photoreticle or photomask layout in 3DICs, then manufacturing cost is reduced and productivity is improved, but magnetic and electric field disturbances cause noise and performance degradation
Solution Approach 1:
A shield structure is introduced as an intermediary element positioned between stacked inductors in 3DICs. This shield structure, comprising conductive materials or doped regions, mediates the electromagnetic interaction by providing a controlled path for field lines, thereby reducing unwanted magnetic and electric field disturbances while allowing the stacked configuration to maintain its manufacturing efficiency
Solution Approach 2:
The patent modifies the electrical parameters of the substrate by creating doped shield regions with controlled doping concentrations. By changing the electrical conductivity parameter in specific regions between the inductors, the patent achieves electromagnetic shielding that reduces field disturbances while maintaining the stacked inductor configuration for cost-effective manufacturing
2Reliability
If a shield structure is placed between inductors to block magnetic and electric fields, then noise and performance degradation are minimized, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The shield structure is merged with the existing substrate and interconnect layers of the 3DIC. Rather than being a separate component, the shield regions are integrated into the substrate structure through doping processes, and conductive shield elements are combined with existing interconnect layers, thereby reducing overall device complexity while maintaining noise shielding effectiveness
Solution Approach 2:
The shield structure serves multiple functions simultaneously: it provides electromagnetic shielding to reduce noise, acts as an electrical ground reference, and can be integrated with existing interconnect structures. This multi-functionality reduces the need for additional separate shielding components, thereby limiting the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shield structure effectively minimizes noise and performance degradation by blocking magnetic and electric fields, allowing the same photoreticle or photomask to be used for forming inductors on both IC chips, thereby reducing costs and maintaining operational specifications.
Implementation Method 1
a shield structure directly between and spaced from the first and second electronic components, wherein the shield structure substantially covers the second electronic component and is configured to block magnetic and/or electric fields
Implementation Method 2
configured to block magnetic and/or electric fields from passing between the first and second electronic components
Data Source
AI summary
Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components. Further, the shield structure substantially covers the second electronic component and/or would substantially cover the first electronic component if the semiconductor packaging device was flipped vertically.