Shielded High-Frequency Module Layout for Thin Antenna Integration
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Solution Overview
Problem
Existing high-frequency modules face challenges in reducing size due to the stacking of semiconductor devices, shield layers, and antenna elements, lack integrated shielding for high-frequency semiconductor devices, and do not efficiently radiate electromagnetic waves.
Innovation Solution
A high-frequency module design featuring a dielectric substrate with a ground plane, a shield structure surrounding the semiconductor device from below and sideways, and a radiation-structure portion that emits electromagnetic waves through an opening, allowing for size reduction and effective shielding and radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor device, shield layer, and antenna element are stacked on top of one another, then the device achieves integrated shielding and antenna function, but the thickness of the entire device cannot be reduced below the sum of the thicknesses of these components
Solution Approach 1:
The patent transitions from a vertical stacking arrangement (thickness direction) to a planar integration arrangement (surface area direction). The semiconductor device and antenna element are disposed side-by-side on the same surface of the substrate, with the shield layer extending to surround both components laterally. This dimensional change allows shielding and antenna functions to be integrated without increasing device thickness below the component sum.
2Device complexity
If the high-frequency semiconductor device is mounted without a shield structure, then the device complexity is reduced, but electromagnetic noise from the semiconductor device is not blocked
Solution Approach 1:
The patent merges the shield layer with the substrate structure, forming an integrated shield-substrate assembly. The shield layer is configured to surround the semiconductor device laterally and is electrically connected to the substrate ground, creating a unified shielding structure that blocks electromagnetic noise without requiring separate shield components. This merging approach provides effective noise blocking while maintaining relatively simple device complexity.
3Device complexity
If the antenna element is electrically connected to the semiconductor device through a connecting portion extending through the shield layer, then the device achieves compact integration, but the shield layer's shielding effectiveness is compromised
Solution Approach 1:
The patent extracts the connection function from the vertical path through the shield layer and places it in the lateral plane. The antenna element and semiconductor device are connected through a connecting portion that extends laterally along the substrate surface, bypassing the need to penetrate the shield layer vertically. This extraction maintains the shield layer's continuous shielding effectiveness while achieving compact integration of components.
4Volume of stationary object
If the radiation-structure portion is disposed inside the shield structure, then the size of the high-frequency module is reduced, but electromagnetic waves may be blocked by the shield structure
Solution Approach 1:
The patent employs asymmetric configuration of the shield layer with a designated opening that is larger than the radiation-structure portion. The shield layer surrounds the semiconductor device and most of the module, but includes an asymmetric opening that allows electromagnetic waves radiated by the radiation-structure portion to escape. This asymmetric design reduces module size through compact integration while maintaining effective electromagnetic wave radiation through the strategically positioned opening.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves size reduction by integrating shielding and efficient electromagnetic wave radiation, effectively blocking electromagnetic noise and enhancing directivity, while maintaining shielding effectiveness.
Implementation Method 1
a shield structure that is provided in a space closer to the bottom surface than the ground plane is and that surrounds the high-frequency semiconductor device from below and sideways of the high-frequency semiconductor device
Implementation Method 2
a radiation-structure portion that causes a high-frequency signal output by the high-frequency semiconductor device to be radiated as electromagnetic waves through the opening
Data Source
AI summary
A ground plane is disposed in a dielectric substrate or on the top surface of the dielectric substrate. A high-frequency semiconductor device is mounted on the bottom surface of the dielectric substrate. A shield structure that is provided in a space closer to the bottom surface than the ground plane is surrounds the high-frequency semiconductor device from below and sideways of the high-frequency semiconductor device and is connected to the ground plane. An opening is formed in the shield structure. A radiation-structure portion causes a high-frequency signal output by the high-frequency semiconductor device to be radiated through the opening.