Shielded Connection Pad Layout for Stacked Image Sensor Interconnects
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Solution Overview
Problem
Image sensors face challenges in improving performance metrics such as resolution and dynamic range while mitigating adverse effects like increased noise and physical size, particularly due to crosstalk issues between adjacent connection pads in high-density interconnections.
Innovation Solution
A stacked semiconductor device with a connection pad shield configuration, where a plurality of connection pad shield structures are interspersed within an insulating medium between semiconductor substrates to mitigate crosstalk, allowing for submicron pixel pitch without adverse impact on device operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If connection pads are placed in high-density interconnections to improve resolution, then pixel pitch is reduced, but crosstalk between adjacent connection pads increases
Solution Approach 1:
Connection pad shield structures are introduced as intermediary elements between adjacent connection pads. These shields act as mediators that block electromagnetic field coupling between pads, preventing crosstalk while allowing the connection pads to maintain high-density placement for improved resolution
Solution Approach 2:
The harmful electromagnetic fields causing crosstalk are extracted and contained within the connection pad shield structures. By isolating the fields within individual pad shields, the harmful interactions between adjacent pads are eliminated while preserving the high-density interconnection layout
2Productivity
If connection pad density is increased to improve readout performance, then interconnection efficiency is improved, but device complexity increases
Solution Approach 1:
The interconnection structure is segmented into modular units consisting of connection pads paired with individual shield structures. This segmentation allows for systematic scaling of connection density while maintaining manageable complexity through repetitive, standardized units that can be manufactured using established processes
Data Source
AI summary
A stacked semiconductor device comprising a first semiconductor substrate, a second semiconductor substrate, an insulating medium disposed between the first semiconductor substrate and the second semiconductor substrate, a plurality of connection pads including a first connection pad and a second connection pad, a first connection pad shield structure, and a second connection pad shield structure. The plurality of connection pads is disposed within the insulating medium and configured to provide one or more electrical connections extending between the first semiconductor substrate and the second semiconductor substrate. The first connection pad is disposed between the first connection pad shield structure and the second connection pad shield structure.