Shielded Plasma Chamber for Radical and Ion Irradiation Control
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Solution Overview
Problem
Current dry-etching apparatuses require multiple machines to perform both radical and ion irradiation steps, leading to reduced throughput and increased equipment costs, especially in semiconductor fabrication, where precise control of ion energy and pressure is necessary for advanced micro-fabrication processes.
Innovation Solution
A plasma processing apparatus with a shielding plate that allows for both radical and ion irradiation using a single device, controlling ion energy from tens eV to KeV by adjusting the power supplied to the sample stage and positioning the ECR surface relative to the shielding plate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple separate apparatuses are used for radical irradiation and ion irradiation steps, then the functionality and versatility are improved, but the device complexity and equipment cost increase
Solution Approach 1:
The patent combines radical irradiation and ion irradiation functions into a single plasma processing apparatus. The plasma generation unit can operate in two modes: generating plasma above the shielding plate for radical irradiation, and generating plasma below the shielding plate for ion irradiation. This merging eliminates the need for multiple separate apparatuses while maintaining both functionalities.
Solution Approach 2:
The plasma processing apparatus is designed as a universal device that can perform both radical irradiation processing and ion irradiation processing. By controlling the position of the ECR surface relative to the shielding plate and adjusting power supply to the sample stage, a single apparatus can execute different processing modes, improving versatility without requiring multiple specialized machines.
2Adaptability or versatility
If multiple separate apparatuses are used for radical irradiation and ion irradiation steps, then the processing capability is improved, but the productivity and throughput deteriorate
Solution Approach 1:
The patent enables continuous processing by eliminating the need to transfer samples between separate apparatuses. The plasma generation unit can switch between radical irradiation mode and ion irradiation mode within the same chamber, allowing sequential processing steps to be performed without interruption or sample handling, thereby maintaining continuous useful action and improving throughput.
3Manufacturing precision
If a shielding plate is inserted to shield ions, then the manufacturing precision for radical-only processing is improved, but the device complexity increases
Solution Approach 1:
The patent extracts the ion shielding function by inserting a shielding plate between the plasma generation region and the sample. This shielding plate selectively blocks ions while allowing radicals to reach the sample, enabling precise control over which plasma components interact with the processed material. This extraction of the shielding function improves manufacturing precision for radical-only processing.
4Manufacturing precision
If the ECR surface position is adjusted to control ion energy, then the manufacturing precision is improved, but the device complexity and operation complexity increase
Solution Approach 1:
The patent employs dynamic positioning of the ECR surface relative to the shielding plate to control ion energy. By adjusting the vertical position of the ECR surface, the apparatus can precisely control the energy of ions that pass through the shielding plate and reach the sample. This dynamic adjustment mechanism enables fine-tuned ion energy control for high-precision processing, with the controller automating the positioning to reduce operational complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-selectivity, high-accuracy plasma processing with reduced equipment costs by performing both radical and ion irradiation steps in a single apparatus, improving throughput and micro-fabrication capabilities.
Implementation Method 1
plasma can be generated by electron cyclotron resonance between 2.45 GHz microwaves supplied from a magnetron 113 and magnetic fields generated by the solenoidal coil 114
Implementation Method 2
a shielding plate 116 arranged over the sample stage 120 to shield incidence of ions generated from the plasma into the sample stage
Implementation Method 3
in a second period for generating plasma under the shielding plate 116, a radio frequency voltage is applied to the sample stage 120 to irradiate ions onto the sample
Data Source
AI summary
Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV.The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.