Shielded Redistribution Substrates for Reliable Semiconductor Packaging
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving improved electrical properties and increased reliability due to limitations in the design and structure of redistribution substrates and shield structures.
Innovation Solution
The semiconductor package incorporates a layered structure comprising lower and upper redistribution substrates with dielectric and conductive patterns, and shield structures that surround the redistribution patterns, enhancing electrical connectivity and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If shield structures are added around redistribution patterns, then electromagnetic wave blocking is improved, but device complexity increases
Solution Approach 1:
The shield structure is nested within the redistribution substrate, with the lower shield structure positioned between the lower redistribution pattern and the semiconductor chip, and the upper shield structure positioned between the upper redistribution pattern and the connection dielectric layer. This nested configuration provides electromagnetic shielding without adding external components, thus improving EM wave blocking while minimizing increases in device complexity.
2Reliability
If multiple redistribution patterns are stacked, then electrical connectivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The redistribution substrate is segmented into multiple functional layers: lower dielectric structure with lower redistribution pattern, connection dielectric layer with connection conductive structure, and upper dielectric structure with upper redistribution pattern. Each layer is formed through separate fabrication steps with defined interfaces, allowing for modular manufacturing and alignment references that reduce overall precision requirements compared to a monolithic multi-layer structure.
3Object-affected harmful factors
If shield structure length is increased, then electromagnetic wave blocking is improved, but warpage increases
Solution Approach 1:
The shield structure is designed with varying local properties: the lower shield structure has a length greater than the semiconductor chip length to provide adequate shielding at the chip interface, while the upper shield structure has a length greater than the connection conductive structure but less than the full substrate length. This localized optimization provides sufficient EM wave blocking at critical interfaces while minimizing overall shield structure length to reduce warpage.
Data Source
AI summary
Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a lower redistribution substrate, an upper redistribution substrate, and a semiconductor chip between the lower redistribution substrate and the upper redistribution substrate. The lower redistribution substrate includes a lower dielectric structure, a lower redistribution pattern surrounded by the lower dielectric structure, and a lower shield structure surrounded by the lower dielectric structure and surrounding the lower redistribution pattern. The upper redistribution substrate includes an upper dielectric structure, an upper redistribution pattern surrounded by the upper dielectric structure, and an upper shield structure surrounded by the upper dielectric structure and surrounding the upper redistribution pattern.