Shielded Semiconductor Package Groove Forming and Sputtering
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Solution Overview
Problem
The conventional manufacturing method of semiconductor packages faces challenges in forming a sufficient thickness shielding layer on the bottom side with weak adhesion strength, leading to potential peeling and increased process steps due to the need for transferring packages between tapes, and limits the application of plating techniques.
Innovation Solution
A method involving a groove forming step to expose the ground line on the wiring substrate, followed by a shielding layer formation on the side and top surfaces, and a dividing step to prevent removal of the shielding layer, reducing process steps and preventing contact with sputtering tape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the shielding layer is formed on individual semiconductor packages after singulation by sputtering, then the shielding layer can be formed on the upper surface, but the thickness on the bottom side is insufficient and adhesion strength is weak
Solution Approach 1:
A groove is formed in advance on the bottom surface of the semiconductor package before applying the shielding layer. This preliminary structural preparation allows the shielding layer to be applied more effectively on the bottom side, improving both thickness uniformity and adhesion strength by providing a mechanical interlocking structure.
Solution Approach 2:
The bottom surface of the semiconductor package is segmented by forming grooves that divide the surface into multiple regions. This segmentation increases the surface area for shielding layer deposition and creates anchoring points that improve adhesion strength while ensuring more uniform thickness distribution.
2Manufacturing precision
If the singulated semiconductor packages are transferred from dicing tape to sputtering tape before sputtering, then the shielding layer can be formed, but the number of process steps increases
Solution Approach 1:
The sputtering process is integrated with the dicing tape itself, eliminating the need for a separate transfer step. The dicing tape serves dual purposes: both for supporting the singulated packages during cutting and for serving as the substrate during sputtering. This merging of functions reduces the number of process steps while maintaining shielding layer formation quality.
Solution Approach 2:
The dicing tape is designed to perform multiple functions: it acts as a support medium during the dicing process, serves as a temporary carrier for singulated packages, and functions as the substrate for sputtering deposition. This multi-functionality eliminates the need for a separate sputtering tape and reduces overall process complexity.
3Adaptability or versatility
If the shielding layer is formed by sputtering on singulated packages, then the shielding layer can be applied, but plating techniques cannot be applied to singulated packages
Solution Approach 1:
The sputtering process is combined with the dicing tape support system, creating an integrated manufacturing approach. This integration not only enables sputtering on singulated packages but also creates a platform that could potentially accommodate other deposition techniques, thereby increasing manufacturing method flexibility and adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents the increase in process steps, maintains shielding layer integrity, and allows for efficient formation of semiconductor packages with reduced risk of peeling and burr formation, while enabling the use of alternative shielding methods like plating.
Implementation Method 1
The conductive shielding layer is formed on an outer surface of the semiconductor package by sputtering
Data Source
AI summary
A manufacturing method of a semiconductor package includes a groove forming step of cutting a semiconductor package substrate from an upper surface side along division lines in a cut-in-depth range of at least such a depth as to cause a ground line included in a wiring substrate to be exposed in a processing groove to such a depth that the semiconductor package substrate is not fully cut with a first cutting blade, thereby forming the processing groove having a first width at least on an upper surface of a sealing material, a shielding layer forming step of forming a shielding layer on a side surface of the processing groove, a bottom surface of the processing groove, and the upper surface of the sealing material with a conductive material from an upper side of the sealing material, and a dividing step of, cutting the semiconductor package substrate into individual semiconductor packages.


