Shielding Electrode Layout Over Node Lines to Limit Coupling Capacitance

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Solution Overview

Problem

Display apparatuses face challenges in achieving high integration and low power consumption due to the increasing number of thin film transistors required for accurate light control, leading to inefficiencies in power management.

Innovation Solution

The use of a display apparatus configuration that includes both silicon semiconductor and oxide semiconductor thin film transistors, along with a boost capacitor and shielding electrodes, to optimize transistor connectivity and reduce power consumption while maintaining high integration levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the number of thin film transistors is increased to accurately control light emission, then the control precision is improved, but the power consumption increases and integration density decreases

Engineering Contradiction:
Improvelight emission control precisionVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The invention segments the thin film transistor population by material type: oxide semiconductor TFTs are used for switching elements (switch TFTs) where low leakage is critical, while silicon semiconductor TFTs are used for driving elements (drive TFTs) where high mobility is critical. This segmentation allows each transistor type to be optimized for its specific function, achieving accurate light emission control with reduced overall power consumption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention applies local quality by assigning different semiconductor materials to different functional regions within the pixel circuit. Oxide semiconductor is locally applied to switching TFTs where low off-state current is the primary requirement, while silicon semiconductor is locally applied to driving TFTs where high carrier mobility is the primary requirement. This localized optimization resolves the contradiction between control precision and power consumption.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If the number of thin film transistors is increased to accurately control light emission, then the control precision is improved, but the integration density decreases

Engineering Contradiction:
Improvelight emission control precisionVSAvoidintegration density
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The invention segments the TFT circuit into functionally distinct groups (switching TFTs and driving TFTs) that can be optimized independently. This segmentation allows for more efficient spatial arrangement and routing of connections, improving integration density while maintaining the necessary number of transistors for precise light emission control.

Inventive Principle:
Principle #1Segmentation

3Measurement precision

If shielding electrodes are added to minimize coupling capacitance effects, then the measurement precision is improved, but the device complexity increases

Engineering Contradiction:
Improvesignal accuracyVSAvoidstructure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The shielding electrode acts as an intermediary element inserted between signal lines to block capacitive coupling. By placing this intermediate shielding structure, the patent minimizes unwanted signal interference and coupling capacitance effects, improving signal accuracy despite the added structural complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12069895B2Display Apparatus having shielding electrode overlapping connection line
Publication Date: 2024.08.20 SAMSUNG DISPLAY CO LTD
  • US12069895B2 patent drawing
  • US12069895B2 patent drawing
  • US12069895B2 patent drawing

AI summary

Provided is a display apparatus including: a substrate in which a display element is arranged; a first thin film transistor arranged in the display area and including a first semiconductor layer including silicon and a first control electrode insulated from the first semiconductor layer; a first interlayer insulating layer covering the first control electrode; a second thin film transistor arranged on the first interlayer insulating layer and including a second semiconductor layer including an oxide semiconductor and a second control electrode insulated from the second semiconductor layer; a second interlayer insulating layer covering the second control electrode; a node connection line arranged on the second interlayer insulating layer and connected to the first control electrode via a first contact hole; a first planarization layer covering the node connection line; and a shielding electrode arranged on the first planarization layer to overlap the node connection line.