Pre-fabricated Shielding Frame for Semiconductor Die EMI Isolation
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Solution Overview
Problem
Semiconductor devices face challenges in effectively isolating from electromagnetic interference (EMI) and radio frequency interference (RFI) due to high frequency electrical components, which can interfere with adjacent circuit elements, and existing vertical interconnection methods are time-consuming and costly.
Innovation Solution
A semiconductor device with a pre-fabricated shielding frame and conductive pillars integrated over the semiconductor die, providing both shielding and electrical interconnects to isolate the die from EMI and RFI, and eliminating the need for separate shielding layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If separate shielding layers are added to isolate semiconductor die from EMI and RFI, then shielding effectiveness is improved, but device complexity and manufacturing time increase
Solution Approach 1:
The patent combines the shielding frame and conductive interconnect structures into a single integrated component. The shielding frame includes integrated conductive pillars that serve dual purposes: providing EMI/RFI shielding and establishing electrical interconnections between stacked devices, eliminating the need for separate shielding layers and reducing manufacturing complexity
Solution Approach 2:
The shielding frame structure performs multiple functions simultaneously: it provides electromagnetic shielding, establishes vertical electrical interconnections through integrated conductive pillars, and serves as a mechanical support structure. This multi-functionality reduces the number of separate components needed in stacked semiconductor devices
2Object-affected harmful factors
If traditional separate shielding layers are used, then shielding effectiveness is improved, but manufacturing time and costs increase
Solution Approach 1:
The shielding frame with integrated conductive pillars is fabricated as a pre-assembled unit before stacking. This preliminary integration of shielding and interconnect structures allows for streamlined manufacturing where the frame is prepared in advance and then combined with semiconductor dies, reducing overall assembly time compared to adding separate shielding layers during the stacking process
3Ease of manufacture
If conductive pillars are integrated into the shielding frame, then manufacturing steps are reduced, but structural complexity of the shielding frame increases
Solution Approach 1:
The conductive pillars are integrated directly into the shielding frame structure during fabrication. This merging of the pillar formation process with the shielding frame manufacturing eliminates separate fabrication steps for creating interconnect structures, simplifying the overall manufacturing process despite the increased structural integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces inter-device interference, simplifies manufacturing by integrating shielding and interconnects, and reduces manufacturing time and costs by eliminating the need for additional shielding layers.
Implementation Method 1
a conductive pillar electrically connected between the first interconnect structure and second interconnect structure
Implementation Method 2
The body and conductive pillar include a material capable of blocking or absorbing inter-device interference
Data Source
AI summary
A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.