Shielding Layer Between Stacked Semiconductor Die
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices stacked together experience adverse effects from electromagnetic interference (EMI) and radio frequency interference (RFI), which existing shielding methods fail to adequately address between the stacked semiconductor die.
Innovation Solution
A method involving the formation of a shielding layer over a first semiconductor die, with a second semiconductor die disposed over the shielding layer, and electrical connection of the shielding layer to a ground point to mitigate EMI and RFI interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor die are stacked together to increase device density, then productivity and device integration are improved, but electromagnetic interference and radio frequency interference between the stacked die worsen
Solution Approach 1:
A shielding layer is introduced as an intermediary component between stacked semiconductor die. This shielding layer, positioned in the interconnect structure between die layers, acts as a mediator that blocks electromagnetic and radio frequency interference while allowing the stacked configuration to maintain its high integration benefits. The shielding layer is electrically connected to ground through via holes to effectively dissipate interference signals.
2Object-affected harmful factors
If shielding layers are added between stacked semiconductor die to reduce interference, then electromagnetic interference is reduced, but device complexity increases
Solution Approach 1:
The shielding layer is merged with the existing interconnect structure between stacked semiconductor die. Rather than being a separate added component, the shielding layer is integrated into the interconnect layers, sharing the same physical space and manufacturing process steps. This merging approach provides EMI shielding functionality without significantly increasing overall device complexity or requiring additional discrete components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively reduces interference between stacked semiconductor die, enhancing the performance and reliability of semiconductor devices by providing effective shielding against EMI and RFI.
Implementation Method 1
A need exists to shield between stacked semiconductor die from adverse effects of EMI, RFI, and other inter-device interference. Accordingly, in one embodiment, the present invention is a method of making a semiconductor device comprising the steps of providing a first semiconductor die, forming a shielding layer over the first semiconductor die, disposing a second semiconductor die over the shielding layer, and electrically connecting the shielding layer to a ground point.
Data Source
AI summary
A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.