Connected Shielding Layer Layout for Flexible AMOLED TFT Reliability

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Solution Overview

Problem

Existing AMOLED screens face issues with poor reliability of thin film transistors (TFTs) due to the influence of charges on organic flexible substrates, leading to hysteresis phenomena and increased parasitic capacitance, which affects transmittance and power consumption.

Innovation Solution

A shielding layer is disposed under the thin film transistor and connected to the gate electrode, effectively shielding the influence of charges from the flexible substrate, improving TFT reliability, and increasing turned-on current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a shielding layer is disposed in a floating manner, then the structure is simple, but the shielding effect is poor and parasitic capacitance increases

Engineering Contradiction:
Improveshielding effectVSAvoidshielding layer configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shielding layer is merged with the gate electrode layer by establishing electrical connection between them. This combination allows the shielding layer to effectively shield charges on the flexible substrate while sharing the same potential as the gate electrode, thereby improving shielding effect without significantly increasing device complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

A connection structure (such as a via hole or conductive path) is introduced as an intermediary to electrically connect the shielding layer to the gate electrode layer. This intermediary enables potential equalization between the two layers, achieving effective charge shielding while maintaining a relatively simple overall structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If organic flexible substrates are disposed under TFTs, then the substrate provides flexibility, but charges on the substrate affect TFT reliability causing hysteresis phenomenon

Engineering Contradiction:
ImproveflexibilityVSAvoidTFT reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The harmful charges accumulated on the flexible substrate are converted into a beneficial shielding effect. By placing a conductive shielding layer between the substrate and TFT, and connecting it to the gate electrode, the charges are effectively shielded, transforming the potential harm from substrate charges into an active shielding mechanism that protects TFT reliability while maintaining flexibility

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the reliability and performance of TFTs by reducing the impact of substrate charges, improving transmittance, and stabilizing electrical properties.

Implementation Method 1

a shielding layer is disposed under a thin film transistor and is connected to a gate electrode of the thin film transistor, which can effectively shield influence of charges of a flexible substrate on thin film transistors

Methodology Applied
Scientific EffectElectrostatic shielding: Faraday Cage

Data Source

PatentUS12250853B2Display device with connected shielding layer and gate electrode layer and manufacturing method thereof
Publication Date: 2025.03.11 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
  • US12250853B2 patent drawing
  • US12250853B2 patent drawing
  • US12250853B2 patent drawing

AI summary

A display device and a manufacturing method thereof are provided. The display device includes a substrate, a shielding layer, a semiconductor layer, and a first gate electrode layer. The shielding layer is disposed on a side of the substrate. The semiconductor layer is disposed on a side of the shielding layer away from the substrate. The shielding layer is at least partially overlapped with the semiconductor layer. The first gate electrode layer is disposed on a side of the semiconductor layer away from the substrate. The first gate electrode layer is at least partially overlapped with the semiconductor layer and is electrically connected to the shielding layer. The manufacturing method of the display device is used to manufacture the display device.