Shielding Layer for X-Ray Driven TFT Stability

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Solution Overview

Problem

Digital X-ray detector devices experience a negative shift phenomenon in the threshold voltage of their driving thin film transistor elements due to X-ray irradiation, leading to defects and reduced performance.

Innovation Solution

A thin film transistor array substrate with shielding layers disposed above the active layer of the driving thin film transistor, electrically connected to the data line, which blocks direct X-ray irradiation and applies a (+) voltage to restore the threshold voltage to its original state.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a driving thin film transistor with high mobility element is used to implement the image, then the image implementation capability is improved, but the negative shift phenomenon of threshold voltage is significantly generated due to X-ray absorption

Engineering Contradiction:
Improveimage implementation capabilityVSAvoidnegative shift phenomenon of threshold voltage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A shielding layer is introduced as an intermediary component between the X-ray source and the driving thin film transistor. This shielding layer blocks or attenuates X-rays from reaching the transistor element, thereby preventing the harmful negative shift phenomenon while allowing the high mobility element to continue functioning for image implementation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The shielding layer is positioned in advance to prevent X-rays from reaching the driving thin film transistor before the harmful effect can occur. By placing the shielding structure beforehand, the patent preemptively counteracts the potential threshold voltage shift, protecting the transistor's electrical characteristics from degradation.

Inventive Principle:
Principle #9Preliminary anti-action

2Object-affected harmful factors

If shielding layers are added to protect the driving thin film transistor from X-rays, then the negative shift phenomenon is minimized, but the device structure becomes more complex

Engineering Contradiction:
Improvenegative shift phenomenonVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The shielding layer is implemented as a thin film or coating deposited directly onto the substrate or transistor structure. This thin-film approach provides effective X-ray protection while adding minimal structural complexity and maintaining the overall compactness of the device. The shielding can be integrated into existing manufacturing processes without requiring bulky additional components.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Minimizes the exposure of the driving thin film transistor element to X-rays, reducing the negative shift phenomenon and maintaining the integrity of the digital X-ray detector device.

Implementation Method 1

X-rays may be absorbed into an active layer of the driving thin film transistor element

Methodology Applied
Scientific EffectX-ray absorption: Absorption (EM radiation)

Implementation Method 2

a negative shift phenomenon of a threshold voltage of the element having the high mobility is significantly generated

Methodology Applied
Scientific EffectNegative shift phenomenon of threshold voltage:

Data Source

PatentUS11594569B2Thin film transistor array substrate for digital X-ray detector device and digital X-ray detector device including the same
Publication Date: 2023.02.28 LG DISPLAY CO LTD
  • US11594569B2 patent drawing
  • US11594569B2 patent drawing
  • US11594569B2 patent drawing

AI summary

A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.