Shielding Plate Deposition Control for Low-Stress Sputtering
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Solution Overview
Problem
Existing sputtering apparatuses face issues with film stress and peeling due to the formation of films with high internal stress, particularly in tungsten films, which can lead to cross-contamination and adhesion of peeled films on substrates.
Innovation Solution
A sputtering apparatus with a shielding plate between targets, controlled to alternate the deposition of tungsten and silicon on the shielding plate, reducing film stress by forming a tungsten silicide film, and using deposition suppressing gases to manage film composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a shielding plate is arranged between multiple targets to prevent cross-contamination, then target isolation is improved, but film stress accumulation occurs on the shielding plate surface
Solution Approach 1:
The patent changes the material composition parameter by alternating between tungsten and silicon targets, which alters the film deposition characteristics and reduces film stress on the shielding plate
Solution Approach 2:
The patent uses composite target materials (tungsten and silicon) to deposit alternating films on the shielding plate, creating a composite film structure that reduces internal stress compared to single-material films
2Object-affected harmful factors
If tungsten films are deposited on the shielding plate to block sputtered particles, then particle blocking is improved, but film peeling occurs due to high internal stress
Solution Approach 1:
The patent changes the material parameter by using silicon instead of pure tungsten for alternating film deposition, which reduces film internal stress and prevents peeling while maintaining particle blocking capability
Solution Approach 2:
The patent creates a composite film structure with alternating tungsten and silicon layers on the shielding plate, where the silicon layers reduce overall film stress and prevent peeling while the tungsten layers maintain particle blocking
3Stress or pressure
If alternating material deposition is performed on the shielding plate to reduce film stress, then film stress reduction is improved, but process complexity increases
Solution Approach 1:
The patent implements periodic action by alternating between tungsten and silicon target deposition in a cyclic manner, which systematically reduces film stress through regular material alternation
Solution Approach 2:
The patent controls material deposition by changing the target material parameter between tungsten and silicon, enabling stress reduction through parameter alternation rather than complex structural changes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces film stress and prevents peeling, minimizing cross-contamination and adhesion of films to substrates by alternating material deposition and using gases to control film composition.
Implementation Method 1
a process chamber provided with a process shield (shielding plate) extending between an adjacent pair of multiple targets
Data Source
AI summary
A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon: a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.