Shift Register Unit Circuit High-Temperature Leakage Control

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Shift register unit circuits in display panels experience significant leakage current increases at high temperatures, leading to deterioration of gate drive signals and poor high-temperature reliability.

Innovation Solution

A shift register unit circuit design incorporating an input circuit, output circuit, and potential control circuit to manage node potentials and restrict leakage current, featuring transistors and capacitors configured to maintain stable node voltages and reduce leakage, with a potential control circuit that brings nodes out of conduction when potential thresholds are exceeded.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional shift register unit circuits are used, then the circuit structure is simple, but leakage current increases significantly at high temperatures causing deterioration of gate drive signals

Engineering Contradiction:
Improvehigh-temperature reliabilityVSAvoidcircuit structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shift register unit circuit is divided into multiple functional modules: input circuit (first transistor, first capacitor), output circuit (second transistor, second capacitor), and potential control circuit (third transistor, third capacitor). Each module performs a specific function to collectively solve the high-temperature reliability problem while maintaining manageable complexity through modular design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The potential control circuit acts as an intermediary between the input circuit and output circuit. It includes a third transistor and third capacitor that detect potential changes at the first node and actively control the second node's potential to prevent excessive voltage changes that would increase leakage current.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If transistors are used in shift register unit circuits, then the circuit can function as gate drive circuit, but leakage current increases 2 to 3 orders of magnitude at high temperatures (70 to 85° C.)

Engineering Contradiction:
Improvegate drive signal stabilityVSAvoidleakage current
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The potential control circuit implements feedback control by monitoring the potential at the first node (which is influenced by the output terminal's potential transitions) and adjusting the second node's potential accordingly. The third transistor is controlled based on the detected potential changes to maintain stable operating conditions and suppress leakage current.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The circuit proactively prevents leakage current issues by controlling the second node's potential before excessive voltage changes occur. The third capacitor stores charge to maintain the second node's potential, and the third transistor is activated in advance to counteract potential harmful effects before they manifest as significant leakage current.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS10706767B2Shift register unit circuit, driving method thereof, gate drive circuit and display device
Publication Date: 2020.07.07 BOE TECHNOLOGY GROUP CO LTD
  • US10706767B2 patent drawing
  • US10706767B2 patent drawing
  • US10706767B2 patent drawing

AI summary

A shift register unit circuit includes an input circuit configured to supply an active potential to a first node responsive to an input pulse from an input terminal being active and to supply an inactive potential to the first node responsive to a reset pulse from a reset terminal being active; an output circuit configured to supply a first clock signal to an output terminal responsive to a second node being at the active potential and to cause a potential at the second node to be changed from the active potential to further away from the inactive potential responsive to a transition of a potential at the output terminal transitioning from the inactive potential to the active potential; and a potential control circuit configured to restrict a change in the potential at the first node caused by the transition of the potential at the output terminal from the inactive potential to the active potential.